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TagoreTech, Inc. is seeking a Principal RF Design Engineer to lead development of next-generation high-power RF front-end modules used in military, cellular, radar, drones, and medical applications. You will architect and design switches, PAs, LNAs, and FEMs using GaN/GaAs processes.
You will drive IP development, perform transistor-level designs, and guide EM modeling, lab characterization, and production test plans. A PhD or MSEE with extensive RFIC/MMIC experience is preferred.
About TagoreTech, Inc.
TagoreTech is pioneering a new semiconductor process that enables high RF power at competitive price points. We are a fabless semiconductor company with design centers in Arlington Heights, Illinois, Phoenix, AZ and Kolkata India. Our R&D team is dedicated to developing disruptive solutions leveraging wide bandgap technologies that address RF design challenges and accelerate time- to-market for a wide range of applications, from 5G cellular infrastructure to consumer electronics, automotive, and defense and security. Our high-power products, including RF switches, RF low-noise amplifiers, and RF power amplifiers, are essential for wireless infrastructure and high-power radios. We partner with leading semiconductor foundries and assembly houses to deliver products that offer premium quality and proven high reliability. Learn more about us at www.tagoretech.com .
Tagore Tech is seeking a talented and motivated Principal RF Design Engineer to join our elite RF engineering team. In this role, you will lead the creation of next-generation product technology for high-power radios used in Military Communications, Cellular Infrastructure, Radar, Unmanned Aerial Vehicles (Drones), and Medical applications. You will be responsible for architecting and designing high-power RF switches, Power Amplifiers (PAs), Low Noise Amplifiers (LNAs), and integrated Front-End Modules (FEMs) leveraging Wide Bandgap (GaN and GaAs) technologies.
Key Responsibilities
Qualifications
Education: MSEE with 15+ years OR PhD with 10+ years of hands-on RFIC / MMIC design experience. * **
Core Design Expertise: Proven track record in transistor-level RF design, particularly with high-power RF circuits utilizing GaN or GaAs processes.
Tools & Simulation: Expert-level proficiency with Cadence, Keysight ADS, or AWR MWO, including non-linear modeling and 2D/3D EM simulation tools (e.g., HFSS, Sonnet).
Semiconductor Physics: Strong understanding of basic device physics, linear/nonlinear model translation, and physical implementation constraints.
Lab & Test: Practical experience in RF characterization techniques and high-power lab equipment (VNAs, spectrum analyzers, power meters, load-pull systems).
Preferred Experience: Prior design experience with RF SOI switches, PIN diode switches, or high-efficiency GaN Power Amplifiers. Deep understanding of high-power thermal management and custom RF package parasitic co-design.
Success Traits
This position offers an exciting opportunity for professional growth in a fast-paced environment where innovation is encouraged. If you are passionate about RF engineering and eager to contribute your expertise, we invite you to apply for this rewarding role. Tagore offers a competitive compensation and benefits package, as well as opportunities for professional growth and development.