Senior RF Module Design Engineer (GaN/GaAs MMICs)

Raytheon; Andover (MA); On-site; USD 108,000 - 205,000; Full time

Job summary

Raytheon in Andover, MA is seeking an experienced Principal RF Module Design/Development Engineer to join our RF Microelectronics team. You will design power combining structures and transitions for RF/microwave modules containing GaAs- and GaN-based MMIC products, supporting production and next-generation development.

The role requires strong RF/Microwave design, testing, and integration expertise, plus hands-on experience with EM simulations and cross-functional collaboration across design and

Qualifications

• BS degree in STEM.
• 8+ years microwave/RF module experience.
• HFSS/ADS/CST experience.
• Ability to obtain/maintain U.S. security clearance.

Responsibilities

• Design RF structures and transitions on multi-layer RF modules.
• 3D electromagnetic simulations of power combining and related RF structures.
• Troubleshoot RF modules that are prototyped and under development.
• Collaborate across RF module design, MMIC design and assembly teams.

Skills

RF Module design

3D EM design

Troubleshooting RF modules

Cross-functional collaboration

Education

BS degree in STEM

Master's degree or PhD in STEM

Tools

HFSS

ADS

CST

Job description

Raytheon in Andover, MA is seeking an experienced Principal RF Module Design/Development Engineer to join our RF Microelectronics team. You will design power combining structures and transitions for RF/microwave modules containing GaAs- and GaN-based MMIC products, supporting production and next-generation development.

The role requires strong RF/Microwave design, testing, and integration expertise, plus hands-on experience with EM simulations and cross-functional collaboration across design and