GaN RF Power Amplifier Engineer — PhD Graduate

GLOBALFOUNDRIES U.S. 2 LLC; Essex Junction (VT); On-site; USD 85,000 - 146,000; Full time

Job summary

GlobalFoundries is seeking a New College Graduate (PhD) candidate to design and develop RF GaN power amplifiers for wireless and defense applications. You will perform EM modeling, circuit simulation, and RFIC layout, while characterizing PA performance through bench tests and measurements.

You will collaborate with process engineering, modeling, and applications teams, contribute to IP disclosures, and help advance GaN RF platforms, including potential publications and conference presentations.

Qualifications

• PhD in Electrical Engineering, Microelectronics, Physics, or related field.
• Research experience in RF/microwave power amplifier design.
• Proficiency with RF EDA tools and RF measurement equipment.
• Willingness to travel up to 10%.
• Fluent English (written and spoken).

Responsibilities

• Design and simulate RF GaN power amplifiers for wireless and defense.
• EM modeling, circuit simulation, and layout of RFIC designs.
• Characterize PA performance through bench testing.
• Collaborate with cross-functional teams to optimize PA performance.
• Write technical reports and contribute to IP disclosures.
• Prepare publications and conference presentations.

Skills

RF PA design

GaN HEMT devices

EM simulation tools

English fluency

Education

PhD in Electrical Engineering or related field

Tools

ANSYS HFSS

ADS

Cadence

RF measurement equipment

Job description

GlobalFoundries is seeking a New College Graduate (PhD) candidate to design and develop RF GaN power amplifiers for wireless and defense applications. You will perform EM modeling, circuit simulation, and RFIC layout, while characterizing PA performance through bench tests and measurements.

You will collaborate with process engineering, modeling, and applications teams, contribute to IP disclosures, and help advance GaN RF platforms, including potential publications and conference presentations.