RFIC GaN Power Amplifier Engineer

GLOBALFOUNDRIES U.S. 2 LLC

Essex Junction (VT)

On-site

USD 85,000 - 146,000

Full time

8 days ago
Application generator

An application made for this job — a tailored resume and cover letter that speak straight to the posting.

Get past ATS filters

Job summary

GlobalFoundries is seeking a New College Graduate (PhD) candidate to design and develop RF GaN power amplifiers for wireless and defense applications. You will perform EM modeling, circuit simulation, and RFIC layout, while characterizing PA performance through bench tests and measurements.

You will collaborate with process engineering, modeling, and applications teams, contribute to IP disclosures, and help advance GaN RF platforms, including potential publications and conference presentations.

Qualifications

  • PhD in Electrical Engineering, Microelectronics, Physics, or related field.
  • Research experience in RF/microwave power amplifier design.
  • Proficiency with RF EDA tools and RF measurement equipment.
  • Willingness to travel up to 10%.
  • Fluent English (written and spoken).

Responsibilities

  • Design and simulate RF GaN power amplifiers for wireless and defense.
  • EM modeling, circuit simulation, and layout of RFIC designs.
  • Characterize PA performance through bench testing.
  • Collaborate with cross-functional teams to optimize PA performance.
  • Write technical reports and contribute to IP disclosures.
  • Prepare publications and conference presentations.

Skills

RF PA design
GaN HEMT devices
EM simulation tools
English fluency

Education

PhD in Electrical Engineering or related field

Tools

ANSYS HFSS
ADS
Cadence
RF measurement equipment

Job description

About GlobalFoundries: GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.

Summary of Role

The New College Graduate (PhD) candidate will provide radio frequency (RF) and/or wireless transmission design.

Essential Responsibilities
  • Design and simulate RF GaN power amplifiers for wireless and defense applications
  • Perform electromagnetic (EM) modeling, circuit simulation, and layout of RFIC designs
  • Characterize and validate power amplifier performance through bench testing and measurement
  • Collaborate with cross-functional teams including process engineering, modeling, and applications to optimize PA performance
  • Contribute to Intellectual Property by authoring innovative invention disclosures
  • Contribute to publications and conference presentations with scientific results
  • Understand application domains for GaN in the fields of Power Electronics and high frequency millimeter wave and RF applications
  • Support technology transfer and design enablement for GaN RF platforms
Other Responsibilities
  • Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs
  • Other duties as assigned by manager
  • Write technical reports and prepare presentations
Required Qualifications
  • Education: PhD in Electrical Engineering, Microelectronics, Physics, or related field
  • Experience: Research experience in RF/microwave power amplifier design, GaN device physics, or RFIC design
  • Skills: Fundamental knowledge of RF power amplifier design, GaN HEMT devices, EM simulation tools (e.g., ANSYS HFSS, ADS, Cadence), and RF measurement equipment
  • Travel: Up to 10%
  • Fluency in English Language – written & verbal
Preferred Qualifications
  • Post‑doc candidates are welcome to apply
  • Experience with GaN PA design for defense, 5G, or satellite communications
  • Proficiency in Cadence Spectre, ADS, HFSS, or similar RF EDA tools
  • Familiarity with load-pull measurements, large‑signal modeling, and RF test equipment
  • Project management skills – i.e., the ability to innovate and execute on solutions that matter; the ability to navigate ambiguity
  • Strong written and verbal communication skills
  • Strong planning & organizational skills

Expected Salary Range $85,000.00 - $146,000.00 The exact Salary will be determined based on qualifications, experience and location.

The role you are applying for may require you to obtain a US Department of Defense Security Clearance at some time during your employment. Acceptance of this role commits to applying for such if requested. Further, the applicant consents to being asked questions about their citizenship and background to assess the likelihood of obtaining a Security Clearance. The applicant also acknowledges that GlobalFoundries can only nominate and submit an application for a Security Clearance. The granting of a Security Clearance is at the sole discretion of the U.S. Government and the Department of Defense.

If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case‑by‑case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.

An offer with GlobalFoundries is conditioned upon the successful completion of pre‑employment conditions, as applicable, and subject to applicable laws and regulations.

GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory. All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third‑party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law.

We shape what's essential At GlobalFoundries you will find a vibrant work environment where collaboration and innovation thrive. Our diverse and global team shares a culture of respect and inclusivity, representing the best in the industry. We celebrate success together and are united by our dedication to excellence and our desire to improve and empower the world.

Get your free, confidential resume review.

or drag and drop your file here.

Similar jobs

Similar jobs worth comparing

RFIC GaN Power Amplifier Engineer
RFIC GaN Power Amplifier Engineer

GlobalFoundries • Essex Junction (VT)

On-site
USD 85,000 - 146,000
RFIC GaN Power Amplifier Engineer
RFIC GaN Power Amplifier Engineer

GlobalFoundries inc. • Essex (MD), Northern (KY)

Hybrid
USD 85,000 - 146,000
Principal Member of Technical Staff RF Design Engineering
Principal Member of Technical Staff RF Design Engineering

GLOBALFOUNDRIES U.S. INC. • Santa Clara (CA)

On-site
USD 167,000 - 275,000
Technology Development Intern, RF GaN (Summer 2027)
Technology Development Intern, RF GaN (Summer 2027)

GlobalFoundries • Essex Junction (VT)

On-site
USD 28,000 - 55,000
Principal Member of Technical Staff RF Design Engineering
Principal Member of Technical Staff RF Design Engineering

GlobalFoundries • Town of Santa Clara (NY)

On-site
USD 167,000 - 275,000
Principal Member of Technical Staff RF Design Engineering
Principal Member of Technical Staff RF Design Engineering

GlobalFoundries inc. • Town of Santa Clara (NY)

On-site
USD 167,000 - 275,000
Device Engineer, ULP CMOS (2027 New College Graduate)
Device Engineer, ULP CMOS (2027 New College Graduate)

GLOBALFOUNDRIES U.S. INC. • Town of Malta (NY)

On-site
USD 60,000 - 101,000
Device Engineer, ULP CMOS (2027 New College Graduate)
Device Engineer, ULP CMOS (2027 New College Graduate)

GlobalFoundries • New York (NY)

On-site
USD 58,000 - 101,000
GaN RF Power Amplifier Engineer — PhD Graduate
GaN RF Power Amplifier Engineer — PhD Graduate

GLOBALFOUNDRIES U.S. 2 LLC • Essex Junction (VT)

On-site
USD 85,000 - 146,000
Principal Eng Device Engineering, Silicon Phonics Compact Modeling (2027 New College Grad)
Principal Eng Device Engineering, Silicon Phonics Compact Modeling (2027 New College Grad)

GLOBALFOUNDRIES U.S. 2 LLC • Town of Malta (NY)

On-site
USD 85,000 - 146,000