GaN HEMT Packaging Engineer – SiP & RF Systems

UNIVERSIDAD POLITECNICA DE MADRID; Spain (TX); On-site; USD 36,000 - 59,000; Full time

Benefits offered by this job

Health and social benefits

Joint program with INDRA

Job summary

The Universidad Politécnica de Madrid invites applications for a research engineer to design, fabricate and characterize packaging architectures for SiP integration of GaN-based HEMTs. The role emphasizes developing packaging approaches using wirebonding and embedded chip techniques for high-frequency, high-power operation.

Responsibilities include thermal dissipation and RF signal integrity characterization via optical spectroscopy (Raman, IR) and RF measurements, with collaboration within the

Qualifications

• Bachelor Degree or equivalent in the listed fields.
• Proficiency in English.
• Goal-oriented mindset, creativity, teamwork & communication skills.
• Previous research experience, especially in cleanroom processing and electrical/optical characterization.

Responsibilities

• Design, fabrication and characterization of packaging architectures for SiP integration of GaN-based HEMTs.
• Study and development of packaging architectures (wirebonding and embedded chip) for high frequency/high power operation.
• Characterization of thermal dissipation and RF signal integrity using optical spectroscopy (Raman, IR) and RF measurements.

Skills

MS Office

LaTeX

Adobe Illustrator

AutoCAD

Python

C

LabVIEW

Mathematica

Matlab

Origin

COMSOL

Education

Electronic/Telecommunication/Materials Engineering

Physics

Tools

None

Job description

The Universidad Politécnica de Madrid invites applications for a research engineer to design, fabricate and characterize packaging architectures for SiP integration of GaN-based HEMTs. The role emphasizes developing packaging approaches using wirebonding and embedded chip techniques for high-frequency, high-power operation.

Responsibilities include thermal dissipation and RF signal integrity characterization via optical spectroscopy (Raman, IR) and RF measurements, with collaboration within the