GaN-on-Silicon Process Development Engineer

Polar Semiconductor

BLOOMINGTON (MN)

On-site

USD 110,000 - 150,000

Full time

4 days ago
Be an early applicant
Application generator

Turn this role into an interview — a resume and cover letter built around what this employer wants.

Get past ATS filters

Job summary

Polar Semiconductor in Bloomington, MN is seeking a seasoned engineer to lead GaN on silicon HEMT process development and transfer, aiming for reliable, manufacturable devices.

The role includes designing experiments, running simulations, analyzing results, and collaborating with Process and Device teams to ensure device performance and yield.

A Master’s or PhD in EE/Physics/Materials Science and 5+ years of relevant experience are typical prerequisites.

Qualifications

  • Masters or PhD in Electrical Engineering, Physics or Materials Science.
  • Experience with GaN devices and III-V nitrides is preferred.
  • Experience in process integration and data analysis is required.

Responsibilities

  • Set up and perform process and device simulations to determine initial parameters.
  • Design and perform experiments to optimize new process flows.
  • Analyze electrical and in-process data from test lots to guide optimization.
  • Collaborate with Process and Device Engineers to develop manufacturable processes.
  • Support transfer of new processes to production and identify improvement opportunities.
  • Provide development updates to management and customers.

Skills

GaN on silicon HEMT
III-V nitrides
Process integration
Electrical test data
Failure analysis
Power packaging
TCAD simulations
JMP
Spotfire

Education

Master's or PhD in Electrical Engineering, Physics or Materials Science

Tools

TCAD Process Simulations
JMP
Spotfire

Job description

Polar Semiconductor in Bloomington, MN is seeking a seasoned engineer to lead GaN on silicon HEMT process development and transfer, aiming for reliable, manufacturable devices.

The role includes designing experiments, running simulations, analyzing results, and collaborating with Process and Device teams to ensure device performance and yield.

A Master’s or PhD in EE/Physics/Materials Science and 5+ years of relevant experience are typical prerequisites.

Get your free, confidential resume review.
or drag and drop your file here.
Similar jobs

Similar jobs worth comparing

GaN Process Development Engineer | Advanced Power Devices
GaN Process Development Engineer | Advanced Power Devices

Polar Semiconductor Inc • BLOOMINGTON (MN)

On-site
USD 125,000 - 165,000
Health insurance
Dental insurance
Vision insurance
+4
Technology Development Engineer
Technology Development Engineer

Polar Semiconductor • BLOOMINGTON (MN)

On-site
USD 110,000 - 150,000
Principal GaN Technology Development Engineer
Principal GaN Technology Development Engineer

Polar Semiconductor, Inc. • BLOOMINGTON (MN)

On-site
USD 125,000 - 165,000
Health insurance
Dental insurance
Vision insurance
+4
Principal Technology Development Engineer
Principal Technology Development Engineer

Polar Semiconductor Inc • BLOOMINGTON (MN)

On-site
USD 125,000 - 165,000
Health insurance
Dental insurance
Vision insurance
+4
Power Device Process Development Engineer
Power Device Process Development Engineer

Polar Semiconductor, LLC • BLOOMINGTON (MN)

On-site
USD 157,000 - 212,000
Health insurance
401(k) with company match
Paid time off
+1
MEMS Process Development Engineer
MEMS Process Development Engineer

Polar Semiconductor • BLOOMINGTON (MN)

On-site
USD 100,000 - 135,000
GaN Plasma Etch Process Engineer (Development)
GaN Plasma Etch Process Engineer (Development)

Socket.dev • Sherman (TX)

On-site
USD 140,000 - 190,000
Senior GaN Power Device Design Engineer
Senior GaN Power Device Design Engineer

Alpha & Omega Semiconductor • Sunnyvale (CA)

On-site
USD 120,000 - 180,000
Advanced GaN Plasma Etch Process Engineer
Advanced GaN Plasma Etch Process Engineer

Texas Instruments • Sherman (TX)

On-site
USD 140,000 - 190,000
Dry/Plasma Etch GaN Process Development Engineer (SM1)
Dry/Plasma Etch GaN Process Development Engineer (SM1)

Texas Instruments Incorporated • Sherman (TX)

Hybrid
USD 120,000 - 180,000