Entry-Level SRAM Memory Design Engineer - Hybrid

Intel Corporation; Austin (TX); Hybrid; USD 91,000 - 173,000; Full time

Benefits offered by this job

Stock bonuses

Health insurance

Retirement plan

Vacation

Job summary

Intel Corporation's Corporate Memory Organization seeks a Circuit Design Engineer to architect, design, and deliver SRAM compilers across high density and high performance profiles. You will collaborate with the DTCO team to co-define silicon process and layout rules while contributing to compiler design flows.

This entry-level role emphasizes industry-competitive SRAM solutions, design validation, and memory compiler workflows, with a hybrid work model and relocation flexibility within the US.

Qualifications

• MS degree in Electrical Engineering or Computer Engineering.
• 6+ months of experience in scripting (Perl, Tcl, Python, etc.).
• Experience with SRAM operations.
• Transistor-level operation and low-power circuit techniques.

Responsibilities

• Provide SRAM compiler design solutions to meet challenging memory specs.
• Design, validation, and characterization of Memory Compilers.
• Memory Compiler Design Flow and Methodology development.

Education

MS degree in Electrical Engineering or Computer Engineering

Tools

Perl

Tcl

Python

Job description

Intel Corporation's Corporate Memory Organization seeks a Circuit Design Engineer to architect, design, and deliver SRAM compilers across high density and high performance profiles. You will collaborate with the DTCO team to co-define silicon process and layout rules while contributing to compiler design flows.

This entry-level role emphasizes industry-competitive SRAM solutions, design validation, and memory compiler workflows, with a hybrid work model and relocation flexibility within the US.