Principal Engineer / MTS – NAND Process Pathfinding – Dry Etch

1100 Micron SemiAsiaOP Pte Ltd; Singapore; On-site; SGD 180,000 - 280,000; Full time

Job summary

1100 Micron SemiAsiaOP Pte Ltd in Singapore is seeking a Principal Engineer / MTS for Dry Etch to spearhead advanced plasma etch initiatives enabling NAND scaling. You will architect and deploy next‑generation etch solutions and drive technology development across multiple teams.

You will apply deep expertise in ICP/CCP plasma etch, plasma chemistry, and AI‑enabled analytics to accelerate process development and manufacturability.

Qualifications

• Experience leading dry etch process development for advanced devices.
• Deep knowledge of plasma-surface interactions and etch chemistry.
• Strong background in plasma physics and transport phenomena.
• Experience mentoring engineers and collaborating with suppliers.

Responsibilities

• Develop and refine dry etch processes to meet NAND roadmap criteria.
• Lead next-generation etch solutions including high aspect ratio patterning.
• Evaluate new plasma chemistries, technologies, and hardware for scaling.
• Collaborate with cross-functional teams to drive technology development.
• Leverage AI-enabled tools and analytics to accelerate process development.

Skills

ICP/CCP plasma etch

plasma etch equipment & chemistry

AI/ML & data analytics

technical leadership

team mentoring

Education

PhD/MS with 7–10+ years in dry etch / semiconductor process development

Tools

Digital engineering tools

Automation scripting

Job description

As a Principal Engineer / Member of Technical Staff (MTS) – Dry Etch, you will spearhead groundbreaking initiatives alongside some of the industry's most accomplished technologists. Your mission is to architect and deploy next‑generation plasma etch solutions that enable future NAND scaling and novel device architectures. This role requires a technical leader who thrives on solving the toughest challenges in plasma processing, pattern transfer, process integration, and technology development driven by advanced tools.

Responsibilities

• Develop and refine dry etch processes to satisfy NAND roadmap criteria for structure, performance, and yield.
• Guide the development of next‑generation etch solutions, encompassing high aspect ratio patterning, selective etch, profile control, and CD management.
• Evaluate new plasma chemistries, process technologies, and hardware to enable future device scaling.
• Collaborate with Process Integration, Thin Films, Wet Etch, Diffusion, Lithography, CMP, Device, and other teams to drive technology development and manufacturability.
• Leverage AI‑enabled engineering tools, advanced analytics, and digital workflows to accelerate process development, improve decision‑making, enhance knowledge management, and increase R&D productivity across thin film technology initiatives.

Minimum Qualifications

• Extensive experience in ICP/CCP plasma etch for advanced semiconductor process development.
• Deep understanding of plasma etch equipment, plasma‑surface interactions, etch chemistry, and profile control.
• Solid foundation in plasma physics, transport phenomena, and materials interactions.
• Demonstrated experience in developing and qualifying advanced dry etch processes.
• Familiarity with AI/ML, statistical modeling, data analytics, and digital engineering methodologies.
• Demonstrated technical leadership and successful engagement with equipment and materials suppliers.

Preferred Qualifications

• PhD/MS with 7–10+ years of relevant experience in dry etch / semiconductor process development.
• Experience in high aspect ratio etching, advanced pattern transfer, selective etching, and complex structure engineering.
• Experience applying machine learning, automation, predictive modeling, or virtual process modeling in semiconductor R&D.
• Strong problem‑solving, communication, and presentation skills.
• Experience mentoring engineers and leading technical teams.

All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, veteran or disability status.