Power GaN Device Characterization Engineer

STMicroelectronics; Sicilia; On-site; EUR 38,000 - 45,000; Full time

Job summary

STMicroelectronics is seeking a data-driven engineer to focus on data analysis, parametric testing, wafer-level characterization, and GaN power technology platform insights. You will transform measurements into actionable technical decisions, linking electrical behavior to device design, process integration, and physical mechanisms.

You will collaborate with R&D and Manufacturing to plan characterization, analyze data, identify trends and root causes, and support technology roadmap development.

Qualifications

• Strong knowledge of data analysis, statistical methods, and experimental data interpretation.
• Experience with semiconductor electrical characterization and parametric testing.
• Understanding of Power GaN device physics, including HEMT operation principles, polarization effects, 2DEG formation, trapping phenomena, current collapse, dynamic RDS(on), breakdown mechanisms, and leakage behavior.
• Ability to correlate electrical performance with device design, process integration, and material characteristics.

Responsibilities

• Perform data analysis and statistical evaluation of parametric test, TEG, and wafer-level characterization results.
• Support the planning and execution of electrical characterization and parametric testing activities for GaN power technologies.
• Analyze measurement data to identify trends, variability, anomalies, failure mechanisms, and opportunities for process and device performance improvement.
• Correlate electrical results with device architecture, process integration, and physical mechanisms governing GaN device operation.
• Investigate key device parameters such as threshold voltage, dynamic RDS(on), leakage currents, breakdown voltage, current collapse, trapping effects, and switching-related figures of merit.
• Support technology development by providing insights into device performance, variability, robustness, and reliability through characterization data analysis.
• Collaborate with R&D and Manufacturing teams to identify root causes and drive corrective actions.
• Prepare clear technical reports and communicate findings to stakeholders across R&D and Operations.
• Apply statistical methods and data visualization techniques using JMP, Excel, Python, and other data analysis tools.
• Contribute to the definition and optimization of characterization methodologies, test structures, and monitoring strategies for GaN technologies.

Skills

Data analysis

Statistical methods

Semiconductor testing

GaN power physics

Python

JMP

Excel

Device modeling

Root cause analysis

English proficiency

Tools

JMP

Excel

Python

Job description

STMicroelectronics is seeking a data-driven engineer to focus on data analysis, parametric testing, wafer-level characterization, and GaN power technology platform insights. You will transform measurements into actionable technical decisions, linking electrical behavior to device design, process integration, and physical mechanisms.

You will collaborate with R&D and Manufacturing to plan characterization, analyze data, identify trends and root causes, and support technology roadmap development.