Senior SiC Device Design Engineer - High-Voltage

STMicroelectronics; Sicilia; On-site; EUR 50,000 - 60,000; Full time

Job summary

STMicroelectronics is seeking a senior engineer to contribute to the development of high-voltage SiC MOSFET technologies. You will design innovative device architectures, simulate performance, and collaborate with internal teams, universities, and partners to industrialize advanced SiC devices.

You will apply strong knowledge of wide bandgap semiconductors, perform electrical characterization, and drive improvements in robustness and manufacturability, while staying aligned with ST’s technology

Qualifications

• Strong knowledge of wide bandgap semiconductor materials and power MOSFET device physics.
• Ability to design, simulate, and optimize SiC devices.
• Analytical skills for electrical characterization and data analysis.
• Problem-solving and root-cause analysis capabilities.
• Commitment to monitoring literature, patents and industry trends.

Responsibilities

• Develop SiC device projects from feasibility to industrialization with internal teams and partners.
• Share technical knowledge across R&D, manufacturing and product teams.
• Design and optimize new SiC device structures and fabrication processes through simulation and testing.
• Develop advanced edge termination structures for high-voltage SiC devices.
• Build collaborations with technology partners and equipment/material suppliers.
• Support customers through technical guidance and issue resolution.

Skills

SiC device design

Device physics

Simulation

Data analysis

Technical reporting

Continuous learning

Tools

Simulation software

Job description

STMicroelectronics is seeking a senior engineer to contribute to the development of high-voltage SiC MOSFET technologies. You will design innovative device architectures, simulate performance, and collaborate with internal teams, universities, and partners to industrialize advanced SiC devices.

You will apply strong knowledge of wide bandgap semiconductors, perform electrical characterization, and drive improvements in robustness and manufacturability, while staying aligned with ST’s technology