Job Search and Career Advice Platform

Enable job alerts via email!

Research Associate in Thin Film Memcapacitors

The University of Edinburgh

City of Edinburgh

On-site

GBP 41,000 - 49,000

Full time

Today
Be an early applicant

Generate a tailored resume in minutes

Land an interview and earn more. Learn more

Job summary

A prestigious university in the UK is seeking a Research Associate to work on Thin Film Memcapacitors. This full-time role focuses on developing electronic devices, requiring a PhD in Electronics or related fields, and involves cleanroom fabrication processes. The successful candidate will join a team dedicated to pushing the boundaries of electronics through innovative solutions addressing significant challenges. The position offers a competitive salary and comprehensive staff benefits.

Benefits

Competitive salary
Generous holiday entitlement
Defined benefits pension scheme
Flexible work options
Family-friendly initiatives

Qualifications

  • PhD in a relevant field is mandatory.
  • Research or industrial experience in memory devices is essential.
  • Ability to work independently in a cleanroom environment is required.

Responsibilities

  • Develop electronic devices based on thin film technologies.
  • Design device architectures and material stacks using cleanroom processes.
  • Characterise developed films and fabricated devices electrically.

Skills

PhD in Electronics, Physics, Materials Science or related
Experience in fabrication and testing of memory devices
Cleanroom fabrication processes knowledge
Electrical characterisation techniques expertise
Impedance spectroscopy modeling knowledge

Education

PhD

Tools

XPS
SEM
AFM
Lithography
Magnetron sputtering
ALD
Job description

Grade UE07: £41,064-£48,822 per annum

School of Engineering, College of Science & Engineering

Institute for Integrated Micro and Nano Systems (IMNS)

Full Time: 35 hours per week

Fixed Term: up to 24 months

The Opportunity

We are looking for an experienced Research Associate in Thin Film Memcapacitors. The position will be based at the King’s Buildings Campus and will commence as soon as possible.

Our ambition is to push the frontiers of electronics through emerging nanotechnologies, disrupting current ways of thinking by innovating advanced energy‑efficient hardware solutions for AI and the new age of electronics. To realise this vision, we are seeking exceptional candidates to join our team, interested in devoting their passion for addressing some of the challenges we have identified.

This post will involve the development of electronic devices based on thin film technologies for novel and emerging memory applications with a focus in reconfigurable and tunable capacitance. These include designing device architectures and material stacks with standard cleanroom processes (lithography, magnetron sputtering, ALD, etc), analytical and morphological characterisation of developed films (such as XPS, SEM and AFM) as well as electrical characterisation of fabricated devices.

This position is affiliated with the prestigious Royal Academy of Engineering Chair in Emerging Technologies held by Regius Chair of Engineering Prof Prodromakis, Director of the Centre for Electronics Frontiers. The appointee will support the delivery of the vision of this 10‑year programme that aspires to develop AI hardware solutions for lifelong learning applications.

Your skills and attributes for success
  • A PhD in Electronics, Physics, Materials Science or similar discipline, with a focus in semiconductor devices and/or thin films
  • Proven track record of research or industrial experience in fabrication and testing of memory devices such as memcapacitors as well as thin films that are typical involved in said devices such as metal–oxides and ferroelectric materials.
  • Demonstrated experience with cleanroom fabrication processes. Key processes include lithography, magnetron sputtering and ALD. The candidate is expected to be able to work independently in a cleanroom environment.
  • Knowledge of electrical characterisation techniques in DC and low‑frequency RF domain. The candidate must be familiar with electrical tests that are involved in the evaluation of semiconductors, insulators and ferroelectric materials.
  • Experience with impedance spectroscopy modelling techniques (such as EIS).

Click to view a copy of the full job description.

Application Information

Please ensure you include the following documents in your application:

  • CV
  • Cover letter
As a valued member of our team
  • A competitive salary
  • An exciting, positive, creative, challenging and rewarding place to work.
  • To be part of a diverse and vibrant international community.
  • Comprehensive staff benefits, such as a generous holiday entitlement, a defined benefits pension scheme, staff discounts, family‑friendly initiatives, and flexible work options. Check out the full list on our staff benefits page and use our reward calculator to discover the total value of your pay and benefits.
Championing equality, diversity and inclusion

The University of Edinburgh holds a Silver Athena SWAN award in recognition of our commitment to advance gender equality in higher education. We are members of the Race Equality Charter and we are also Stonewall Scotland Diversity Champions, actively promoting LGBT equality.

Prior to any employment commencing with the University you will be required to evidence your right to work in the UK. Further information is available on our right to work webpages.

The University may be able to sponsor the employment of international workers in this role. This will depend on a number of factors specific to the successful applicant.

Key dates to note

The closing date for applications is 16th January 2026.

Unless stated otherwise the closing time for applications is 11:59pm GMT. If you are applying outside the UK the closing time on our adverts automatically adjusts to your browser’s local time zone.

Interviews dates to be confirmed.

Get your free, confidential resume review.
or drag and drop a PDF, DOC, DOCX, ODT, or PAGES file up to 5MB.