Wide Bandgap Process Integration Engineer NCG

Texas Instruments Incorporated; Dallas (TX); Vor Ort; USD 150.000 - 220.000; Vollzeit

Zusammenfassung

Texas Instruments Incorporated is seeking a GaN Process Integration Engineer to drive development and scaling of GaN power devices. You will work on device simulations, design, layout, and DOE-driven process optimization within TI's ATD team, interfacing with fab, reliability, and business units to ensure high-volume manufacturability.

The ideal candidate has deep knowledge of GaN device physics, power FETs, and materials characterization, plus hands-on lab experience and strong communication

Qualifikationen

• Strong understanding of GaN device physics and HEMT flow.
• Experience with electrical and materials characterization methods.
• Hands-on lab experience and strong problem solving.
• Ability to collaborate with fab/manufacturing and reliability teams.
• Excellent verbal and written communication across teams.

Aufgaben

• GaN device simulations (TCAD), device design, layout.
• Develop robust process flows and DOE execution.
• Solve complex integration challenges with fab teams.
• Collaborate on device manufacturability and reliability.
• Conduct root-cause investigations for yield improvements.

Kenntnisse

Power FETs physics

GaN/HEMT device physics

Electrical characterization

Materials characterization

Lab skills

Jobbeschreibung

Change the world. Love your job.

TI is seeking an innovative and highly skilled GaN Process Integration Engineer to join our cutting-edge Gallium Nitride (GaN) Technology Development Team. This role offers the unique opportunity to work at the forefront of developing Gallium Nitride technology that is redefining the power electronics landscape — enabling higher efficiency, faster switching, and smaller, more reliable systems. You will be instrumental in developing and scaling GaN power process technologies for high-volume manufacturing. You’ll collaborate across disciplines to deliver state-of-the-art devices with world-class performance and reliability.

About the job

This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:

• GaN device simulations (TCAD), device design, layout
• Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges
• Collaboration with fab/manufacturing engineers to ensure device manufacturability
• Collaboration with reliability engineers to meet device reliability requirements
• Failure root-cause investigation for device/process/reliability/yield improvement

The ideal candidate is expected to have a strong understanding of the following:

• Power FETs and other relevant semiconductor device physics
• Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
• Electrical and materials characterization methodologies and statistical data analysis
• Strong hands-on lab experience and excellent problem solving skills are also needed
• Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams