GaN Power Device Project Lead Engineer

Texas Instruments

Dallas (TX)

On-site

USD 120,000 - 190,000

Full time

8 days ago

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Job summary

Texas Instruments is seeking an innovative GaN Device Project Lead Engineer to join our Gallium Nitride Technology Development Team. You will lead development and scaling of GaN power devices, collaborating with fab/manufacturing, Kilby Labs, and business units to deliver high-performance, reliable devices for power electronics.

The ideal candidate has a PhD or Master’s in EE, 3+ years in GaN device development, and strong hands-on lab skills.

Qualifications

Master's in Electrical Engineering or related field.
3+ years of hands-on GaN or compound semiconductor device development.
Strong knowledge of III–V materials and semiconductor processing.
Experience with process integration, DOE planning, electrical characterization, and failure analysis.
Ability to work across functional teams in a fast-paced R&D environment.

Responsibilities

Lead development, characterization and optimization of GaN power devices.
Collaborate with fab/manufacturing engineers to ensure device manufacturability.
Drive device simulations (TCAD), DOE execution, and solve complex integration challenges.
Investigate failure root causes to improve reliability and yield.