GaN Power Device Project Lead Engineer

Texas Instruments; Dallas (TX); On-site; USD 120,000 - 190,000; Full time

Job summary

Texas Instruments is seeking an innovative GaN Device Project Lead Engineer to join our Gallium Nitride Technology Development Team. You will lead development and scaling of GaN power devices, collaborating with fab/manufacturing, Kilby Labs, and business units to deliver high-performance, reliable devices for power electronics.

The ideal candidate has a PhD or Master’s in EE, 3+ years in GaN device development, and strong hands-on lab skills.

Qualifications

• Master's in Electrical Engineering or related field.
• 3+ years of hands-on GaN or compound semiconductor device development.
• Strong knowledge of III–V materials and semiconductor processing.
• Experience with process integration, DOE planning, electrical characterization, and failure analysis.
• Ability to work across functional teams in a fast-paced R&D environment.

Responsibilities

• Lead development, characterization and optimization of GaN power devices.
• Collaborate with fab/manufacturing engineers to ensure device manufacturability.
• Drive device simulations (TCAD), DOE execution, and solve complex integration challenges.
• Investigate failure root causes to improve reliability and yield.

Skills

Hands-on lab experience

Problem solving

Verbal communication

Written communication

Team collaboration

Education

Master's degree in Electrical Engineering

PhD in Electrical Engineering

Tools

TCAD

GaN fabrication tools

Electrical characterization equipment

Job description

Texas Instruments is seeking an innovative GaN Device Project Lead Engineer to join our Gallium Nitride Technology Development Team. You will lead development and scaling of GaN power devices, collaborating with fab/manufacturing, Kilby Labs, and business units to deliver high-performance, reliable devices for power electronics.

The ideal candidate has a PhD or Master’s in EE, 3+ years in GaN device development, and strong hands-on lab skills.