GaN Power Device Project Lead

Texas Instruments Incorporated; Dallas (TX); On-site; USD 150,000 - 190,000; Full time

Job summary

Texas Instruments Incorporated is seeking a GaN Device Project Lead Engineer to advance GaN power devices from design through high-volume manufacturing. You will lead device development, characterization, and optimization, working closely with fab/manufacturing teams and Kilby Labs to ensure reliability and manufacturability.

The ideal candidate has deep GaN device physics knowledge, hands-on lab experience, and the ability to drive DOE programs and complex integration challenges in a fast-paced

Qualifications

• Experience with gallium nitride GaN power devices and related device physics.
• Ability to design and interpret device simulations and experiments.
• Strong hands-on lab skills and problem-solving ability.
• Excellent communication and interfacing with multiple teams.

Responsibilities

• Lead development, characterization and optimization of GaN power devices.
• Develop and optimize robust device/process flows and DOE execution.
• Collaborate with fab/manufacturing to ensure manufacturability and reliability.
• Lead failure root-cause investigations for device/process improvements.

Skills

GaN device physics

DOE execution

TCAD simulations

lab problem solving

cross-functional collaboration

Tools

TCAD

Lab instruments

Job description

Texas Instruments Incorporated is seeking a GaN Device Project Lead Engineer to advance GaN power devices from design through high-volume manufacturing. You will lead device development, characterization, and optimization, working closely with fab/manufacturing teams and Kilby Labs to ensure reliability and manufacturability.

The ideal candidate has deep GaN device physics knowledge, hands-on lab experience, and the ability to drive DOE programs and complex integration challenges in a fast-paced