Wide Bandgap Process Integration Engineer NCG

Texas Instruments; Bouchard (TX); On-site; USD 120,000 - 180,000; Full time

Job summary

Texas Instruments Incorporated is seeking a GaN Process Integration Engineer to lead development, characterization and optimization of GaN power devices within the ATD team. You will drive device design, TCAD simulations, and DOE execution across fab/manufacturing and reliability groups to achieve high-performance, reliable power devices.

The role requires strong III-nitride materials knowledge, hands-on lab skills, and excellent communication as you interface with multiple teams to scale GaN

Qualifications

• Strong knowledge of III-nitride materials, device physics, and reliability.
• Experience with GaN power devices and power FETs.
• Experience with design-of-experiment (DOE) execution.
• Hands-on lab experience and problem solving skills.
• Excellent verbal and written communication across teams.

Responsibilities

• Lead development, characterization and optimization of GaN power devices.
• GaN device simulations (TCAD), device design, layout.
• Develop robust process flows and execute DOE to solve integration challenges.
• Collaborate with fab/manufacturing engineers to ensure device manufacturability.
• Collaborate with reliability engineers to meet device reliability requirements.
• Conduct failure root-cause investigations for device/process/reliability/yield improvement.

Skills

Power FETs

GaN device physics

DOE execution

TCAD simulations

Device integration

Tools

TCAD tools

Job description

Change the world. Love your job.

TI is seeking an innovative and highly skilled GaN Process Integration Engineer to join our cutting-edge Gallium Nitride (GaN) Technology Development Team. This role offers the unique opportunity to work at the forefront of developing Gallium Nitride technology that is redefining the power electronics landscape - enabling higher efficiency, faster switching, and smaller, more reliable systems. You will be instrumental in developing and scaling GaN power process technologies for high-volume manufacturing. You’ll collaborate across disciplines to deliver state-of-the-art devices with world-class performance and reliability.

About the job

This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:

• GaN device simulations (TCAD), device design, layout
• Develop robust process flows, drive design-of-experiment (DOE) execution, and solve complex integration challenges
• Collaboration with fab/manufacturing engineers to ensure device manufacturability
• Collaboration with reliability engineers to meet device reliability requirements
• Failure root-cause investigation for device/process/reliability/yield improvement

The ideal candidate is expected to have a strong understanding of the following:

• Power FETs and other relevant semiconductor device physics
• Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
• Electrical and materials characterization methodologies and statistical data analysis
• Strong hands-on lab experience and excellent problem solving skills are also needed
• Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams