Wide Bandgap Device/PI Engineer (R&D)

Texas Instruments Incorporated; Dallas (TX); On-site; USD 150,000 - 190,000; Full time

Job summary

Texas Instruments Incorporated is seeking a GaN Device Project Lead Engineer to advance GaN power devices from design through high-volume manufacturing. You will lead device development, characterization, and optimization, working closely with fab/manufacturing teams and Kilby Labs to ensure reliability and manufacturability.

The ideal candidate has deep GaN device physics knowledge, hands-on lab experience, and the ability to drive DOE programs and complex integration challenges in a fast-paced

Qualifications

• Experience with gallium nitride GaN power devices and related device physics.
• Ability to design and interpret device simulations and experiments.
• Strong hands-on lab skills and problem-solving ability.
• Excellent communication and interfacing with multiple teams.

Responsibilities

• Lead development, characterization and optimization of GaN power devices.
• Develop and optimize robust device/process flows and DOE execution.
• Collaborate with fab/manufacturing to ensure manufacturability and reliability.
• Lead failure root-cause investigations for device/process improvements.

Skills

GaN device physics

DOE execution

TCAD simulations

lab problem solving

cross-functional collaboration

Tools

TCAD

Lab instruments

Job description

Change the world. Love your job.

TI is seeking an innovative and highly skilled GaN Device Project Lead Engineer to join our cutting-edge Gallium Nitride (GaN) Technology Development Team. This role offers the unique opportunity to work at the forefront of developing Gallium Nitride technology that is redefining the power electronics landscape — enabling higher efficiency, faster switching, and smaller, more reliable systems. You will be instrumental in developing and scaling GaN power process technologies for high-volume manufacturing. You’ll collaborate across disciplines to deliver state-of-the‑art devices with world-class performance and reliability.

About the job

This position is focused on leading the development, characterization and optimization of gallium nitride (GaN) power devices. As part of TI's Advanced Technology Development (ATD) team, the role involves close collaboration with fab/manufacturing, business units and Kilby Labs. This position requires in-depth knowledge of III-nitride materials, device physics, and reliability. The scope of the job includes, but not limited to:

• GaN device simulations (TCAD), device design, layout
• Develop robust process flows, drive design‑of‑experiment (DOE) execution, and solve complex integration challenges
• Collaboration with fab/manufacturing engineers to ensure device manufacturability
• Collaboration with reliability engineers to meet device reliability requirements
• Failure root‑cause investigation for device/process/reliability/yield improvement

The ideal candidate is expected to have a strong understanding of the following:

• Power FETs and other relevant semiconductor device physics
• Typical analog silicon and GaN high electron mobility transistor (HEMT) process flows and the underlying process physics
• Electrical and materials characterization methodologies and statistical data analysis
• Strong hands‑on lab experience and excellent problem solving skills are also needed
• Excellent verbal and written communication skills are a must as the position requires interfacing with multiple teams