GaN Power Process Integration Engineer

Texas Instruments Incorporated

Bouchard (TX)

On-site

USD 120,000 - 180,000

Full time

4 days ago

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Job summary

Texas Instruments Incorporated is seeking a GaN Process Integration Engineer to lead development, characterization and optimization of GaN power devices within the ATD team. You will drive device design, TCAD simulations, and DOE execution across fab/manufacturing and reliability groups to achieve high-performance, reliable power devices.

The role requires strong III-nitride materials knowledge, hands-on lab skills, and excellent communication as you interface with multiple teams to scale GaN

Qualifications

Strong knowledge of III-nitride materials, device physics, and reliability.
Experience with GaN power devices and power FETs.
Experience with design-of-experiment (DOE) execution.
Hands-on lab experience and problem solving skills.
Excellent verbal and written communication across teams.

Responsibilities

Lead development, characterization and optimization of GaN power devices.
GaN device simulations (TCAD), device design, layout.
Develop robust process flows and execute DOE to solve integration challenges.
Collaborate with fab/manufacturing engineers to ensure device manufacturability.
Collaborate with reliability engineers to meet device reliability requirements.
Conduct failure root-cause investigations for device/process/reliability/yield improvement.

Skills

Power FETs

GaN device physics

DOE execution

TCAD simulations

Device integration

Tools

TCAD tools

Job description

The role requires strong III-nitride materials knowledge, hands-on lab skills, and excellent communication as you interface with multiple teams to scale GaN

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