GaN Power Process Integration Engineer Drive Yield

Texas Instruments Incorporated; Dallas (TX); On-site; USD 150,000 - 220,000; Full time

Job summary

Texas Instruments Incorporated is seeking a GaN Process Integration Engineer to drive development and scaling of GaN power devices. You will work on device simulations, design, layout, and DOE-driven process optimization within TI's ATD team, interfacing with fab, reliability, and business units to ensure high-volume manufacturability.

The ideal candidate has deep knowledge of GaN device physics, power FETs, and materials characterization, plus hands-on lab experience and strong communication

Qualifications

• Strong understanding of GaN device physics and HEMT flow.
• Experience with electrical and materials characterization methods.
• Hands-on lab experience and strong problem solving.
• Ability to collaborate with fab/manufacturing and reliability teams.
• Excellent verbal and written communication across teams.

Responsibilities

• GaN device simulations (TCAD), device design, layout.
• Develop robust process flows and DOE execution.
• Solve complex integration challenges with fab teams.
• Collaborate on device manufacturability and reliability.
• Conduct root-cause investigations for yield improvements.

Skills

Power FETs physics

GaN/HEMT device physics

Electrical characterization

Materials characterization

Lab skills

Job description

Texas Instruments Incorporated is seeking a GaN Process Integration Engineer to drive development and scaling of GaN power devices. You will work on device simulations, design, layout, and DOE-driven process optimization within TI's ATD team, interfacing with fab, reliability, and business units to ensure high-volume manufacturability.

The ideal candidate has deep knowledge of GaN device physics, power FETs, and materials characterization, plus hands-on lab experience and strong communication