Staff SiC Power Device & Process Engineer

Vishay Intertechnology Inc.

San Jose (CA)

On-site

USD 160,000 - 225,000

Full time

4 days ago

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Job summary

Vishay Intertechnology, Inc. in California is seeking a Staff SiC Device and Process Engineer to strengthen our power semiconductor team.

You will develop SiC power JFET and MOSFET fabrication processes, design and simulate, and characterize devices at wafer level, coordinating with fab teams. Applicants should have 5+ years in power semiconductor technology development and hands-on experience with TCAD, MATLAB and MathCAD.

Qualifications

Minimum 5 years direct and hands-on experience in power semiconductor technology development.
Direct experience leading development projects through fabrication process integration, device simulation and characterization.
Experience with TCAD simulation for power semiconductor devices (WBG preferred).
Proficiency with MATLAB and MathCAD for characteristic analysis.

Responsibilities

Develop (design and simulate) advanced SiC Power JFET and its fabrication process.
Develop (design and simulate) advanced high voltage SiC Power MOSFET and its fabrication process.
Develop PCM/TEG structures for monitoring and evaluation of device design and fabrication.
Perform electrical characterization on SiC power semiconductor devices and related PCM/TEG structures at wafer level.
Define and develop specifications of unit processes and coordinate their development with fab process team.
Devise process experiments for manufacturing window optimization and yield improvement.
Device reliability qualification and reliability improvement.