Staff SiC Device & Process Engineer — Hybrid San Jose

Vishay Intertechnology

San Jose, Northern (CA, KY)

Hybrid

USD 160,000 - 225,000

Full time

7 days ago

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Job summary

Vishay Intertechnology, based in California, seeks a Staff SiC Device & Process Engineer to advance wide bandgap semiconductor tech for the Vishay-Max SiC portfolio. You will design, simulate, and qualify SiC power devices and their fabrication processes, collaborating with global fab teams.

The role covers device characterization, process development, reliability improvement, and project leadership. Hybrid working in San Jose, CA.

Qualifications

Minimum 5 years direct experience in power semiconductor technology development.
Experience leading fabrication process integration, device simulation and characterization.
Strong TCAD experience for power devices, especially WBG semiconductors, is required.
Proficiency with MATLAB and MathCAD for data analysis.

Responsibilities

Develop (design and simulation) of advanced SiC Power JFET and its fabrication.
Develop (design and simulation) of advanced high voltage SiC Power MOSFET and its fabrication.
Develop PCM/TEG structures for monitoring and evaluation of device design and fabrication.
Perform electrical characterization on SiC power devices and PCM/TEG structures at wafer level.
Define and develop unit process specifications and coordinate with fab process team.
Devise process experiments for window optimization and yield improvement.
Device reliability qualification verification and reliability improvement.