SiC Power Device Engineer: From Lab to Production

Navitas Semiconductor Usa; Torrance (CA); On-site; USD 90,000 - 120,000; Full time

Benefits offered by this job

Ownership across the full product lifecycle

Strong mentorship

Job summary

Navitas Semiconductor Usa is seeking a Product Engineer for Silicon Carbide (SiC) to support the development and production of high‑voltage devices. The ideal candidate will have a B.S. or M.S. in Electrical Engineering or Physics and 2–3 years of relevant experience.

This role involves device characterization, supporting new technology qualification, and collaborating with various teams to enhance yield and quality. Experience with high-voltage testing equipment is essential, as is strong data-analysis capability.

Qualifications

• 2–3 years of experience in high-voltage SiC or discrete power device engineering.
• Hands-on bench testing experience with high-voltage discrete FETs.
• Strong data-analysis skills including SPC, Cpk, and yield.

Responsibilities

• Execute device characterization across the SiC portfolio.
• Support qualification of new technologies and products.
• Analyze CP/FT and characterization data for yield improvements.

Skills

Device characterization

Semiconductor device analysis

Data analysis skills

Bench testing

Education

B.S. or M.S. in Electrical Engineering, Physics, or related field

Tools

Digital multimeters (DMMs)

Oscilloscopes

Low-voltage (LV) and high-voltage (HV) power supplies

JMP

Python

Job description

Navitas Semiconductor Usa is seeking a Product Engineer for Silicon Carbide (SiC) to support the development and production of high‑voltage devices. The ideal candidate will have a B.S. or M.S. in Electrical Engineering or Physics and 2–3 years of relevant experience.

This role involves device characterization, supporting new technology qualification, and collaborating with various teams to enhance yield and quality. Experience with high-voltage testing equipment is essential, as is strong data-analysis capability.