Staff SiC Device & Process Engineer

Vishay Intertechnology Inc.

San Jose (CA)

On-site

USD 160,000 - 225,000

Full time

4 days ago
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Job summary

Vishay Intertechnology, Inc. in California is seeking a Staff SiC Device and Process Engineer to strengthen our power semiconductor team.

You will develop SiC power JFET and MOSFET fabrication processes, design and simulate, and characterize devices at wafer level, coordinating with fab teams. Applicants should have 5+ years in power semiconductor technology development and hands-on experience with TCAD, MATLAB and MathCAD.

Qualifications

  • Minimum 5 years direct and hands-on experience in power semiconductor technology development.
  • Direct experience leading development projects through fabrication process integration, device simulation and characterization.
  • Experience with TCAD simulation for power semiconductor devices (WBG preferred).
  • Proficiency with MATLAB and MathCAD for characteristic analysis.

Responsibilities

  • Develop (design and simulate) advanced SiC Power JFET and its fabrication process.
  • Develop (design and simulate) advanced high voltage SiC Power MOSFET and its fabrication process.
  • Develop PCM/TEG structures for monitoring and evaluation of device design and fabrication.
  • Perform electrical characterization on SiC power semiconductor devices and related PCM/TEG structures at wafer level.
  • Define and develop specifications of unit processes and coordinate their development with fab process team.
  • Devise process experiments for manufacturing window optimization and yield improvement.
  • Device reliability qualification and reliability improvement.

Skills

Power semiconductors development
Device simulation
TCAD
MATLAB
MathCAD

Tools

TCAD simulation
MATLAB
MathCAD

Job description

San Jose, CA, United States of America | Research & Development

We are seeking great talent to help us build The DNA of tech.

Vishay manufactures one of the world's largest portfolios of discrete semiconductors and passive electronic components that are essential to innovative designs in the automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. We help the world's most in-demand technologies come to life. Every day our products touch your life and the lives of people across the world, though you likely do not know it. Come join us and help us build The DNA of tech.

Vishay Intertechnology, Inc. is a Fortune 1,000 Company listed on the NYSE (VSH).

Do you want to help us build the DNA of tech.? Vishay is currently seeking applicants for Staff SiC Device and Process Engineer.

We are looking for a Staff SiC Device and Process Engineer to strengthen our team based in California. In this position you will be enabling innovative wide bandgap semiconductor technology to realize the next generations of Vishay-Max SiC proprietary power device product portfolio.

Job Location:

This position will be based in California

What you will be doing:

  • Develop (including Design and Simulation) of the advanced SiC Power JFET and its fabrication process.
  • Develop (including Design and Simulation) of the advanced high voltage SiC Power MOSFET and its fabrication process.
  • Develop the PCM/TEG structures for monitoring and evaluation of the device design and fabrication process.
  • Perform electrical characterisation on SiC power semiconductor devices and the related PCM/TEG structures at the wafer-level.
  • Define and develop specifications of unit processes and coordinate their development with fab process team.
  • Devise process experiments for manufacturing process window optimization and improving the production yield.
  • Device Reliability qualification verification and reliability improvement

What you will bring along:

A comprehensive, demonstrable background in power semiconductor materials / semiconductor device physics, and / fabrication process with hand-on direct experiences. You will approach tasks in a logic-based way, along with having the ability and motivation to develop novel and creative ideas. Your communication skills will enable seamless collaboration both with our manufacturing partners and internal fab, and you will know how to build and maintain lasting relationships in international and cross-functional project teams.

You are best equipped for this role if you have:

  • Minimum 5 years direct and hand-on experience in the field of power semiconductor technology development.
  • Direct experience in leading development projects throughout the fabrication process integration, device simulation and characterization, with the ability to apply project management best practice methodology.
  • Rich experiences in TCAD simulation for power semiconductor devices, especially WBG semiconductor, are required. Knowledge of software tools for characteristic analysis of process, i.e. MATLAB, MathCAD.
  • Knowledge in semiconductor material for application in power semiconductor devices is desirable.

What can we offer you for your talent:

Vishay offers a comprehensive suite of benefit programs including health care coverage, financial support programs and other resources designed to help you achieve your personal and professional goals. With us, you'll experience unique career paths, an open and collaborative culture, a stable business that will be there for you, and opportunities to work globally and locally. (Salary Range $160,000 - $225,000)

Vishay committed to a workplace free of harassment and unlawful discrimination. We do not engage in discrimination or harassment based on race, color, age, gender, sexual orientation, gender identity and expression, ethnicity or national origin, disability, pregnancy, religion, political affiliation, union membership, covered veteran status, protected genetic information or marital status in hiring and employment practices.

It is the policy of Vishay to provide equal employment and advancement opportunities to all colleagues and applicants for employment without regard to race, color, ethnicity, religion, gender, pregnancy/childbirth, age, national origin, sexual orientation, gender identity or expression, disability or perceived disability, genetic information, citizenship, veteran or military status or a person’s relationship or association with a protected veteran, including spouses and other family members, marital or domestic partner status, or any other category protected by federal, state and/or local laws.

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