Lead SiC Power Device Research Scientist

Wolfspeed; Durham (NC); On-site; USD 140,000 - 190,000; Full time

Job summary

Wolfspeed in Durham, NC is seeking a Research Scientist to lead device development for next-generation silicon carbide (SiC) power devices, including MOSFETs, JFETs, diodes and IGBTs. You will collaborate with Process Development, Test and Validation, Reliability, and NPI teams to drive the full product life cycle of new technologies.

The role emphasizes device design, DOE, and hands-on device characterization, with interaction across multiple groups to deliver optimized, manufacturable,

Qualifications

• Ph.D. in Electrical Engineering, Solid State Physics, or closely related area.
• 5–10 years of industrial experience in power device development preferred.
• Experience in low voltage (~100V) discrete silicon power MOSFET development preferred.
• Strong understanding in semiconductor device physics.
• Experience in hands-on characterization of power semiconductor devices.
• Working knowledge of CAD layout tools and TCAD tools.
• Design of experiments and data interpretation skills.
• Excellent analytical and problem-solving skills and communications/presentations skills.
• Must be authorized to work in the USA.

Responsibilities

• Lead device development efforts for high-performance SiC power switching devices.
• Participate in device concept development across SiC structures (MOSFETs, JFETs, BJTs, IGBTs, diodes).
• Explore new device concepts for future generations of SiC power devices.
• Perform DoE activities for performance optimization of commercial SiC power devices.
• Provide optimum device designs with considerations to manufacturability and reliability.
• Hands-on characterization of experimental devices.
• Data analysis of experimental data and communication of findings with teams.
• Prepare technical presentations and papers for internal meetings, conferences and journals.

Skills

Device physics

Device characterization

TCAD tools

CAD layout tools

DOE / data analysis

Analytical thinking

Communication skills

Team collaboration

Education

Ph.D. in Electrical Engineering or related field

Tools

TCAD tools

CAD layout tools

Job description

Wolfspeed in Durham, NC is seeking a Research Scientist to lead device development for next-generation silicon carbide (SiC) power devices, including MOSFETs, JFETs, diodes and IGBTs. You will collaborate with Process Development, Test and Validation, Reliability, and NPI teams to drive the full product life cycle of new technologies.

The role emphasizes device design, DOE, and hands-on device characterization, with interaction across multiple groups to deliver optimized, manufacturable,