SiC Power Device Engineer – Full Lifecycle Impact

Navitas Semiconductor; Torrance (CA); On-site; USD 90,000 - 120,000; Full time

Benefits offered by this job

Mentorship and technical expertise

Ownership of full product lifecycle

Job summary

Navitas Semiconductor is seeking a Product Engineer – SiC in Torrance, California to support the development and production of high‑voltage Silicon Carbide power devices, ensuring robust performance throughout the manufacturing lifecycle.

The ideal candidate will have a B.S. or M.S. in Electrical Engineering or a related field, along with 2–3 years of experience in high‑voltage SiC product engineering. You will be responsible for executing device characterization, developing test plans, and collaborating with cross‑functional teams.

Qualifications

• 2–3 years of experience in high‑voltage SiC or discrete power device product, test, or characterization engineering.
• Experience with semiconductor device analysis and debugging.
• Strong data analysis skills (SPC, Cpk, yield).

Responsibilities

• Execute device characterization across the SiC portfolio.
• Support the qualification of new technologies and products.
• Drive test-limit optimization and continuous-improvement initiatives.

Skills

Electrical Engineering

High‑voltage SiC

Data analysis

Bench testing

Education

B.S. or M.S. in Electrical Engineering, Physics, or a related field

Tools

JMP

Python

Oscilloscopes

Digital multimeters

Job description

Navitas Semiconductor is seeking a Product Engineer – SiC in Torrance, California to support the development and production of high‑voltage Silicon Carbide power devices, ensuring robust performance throughout the manufacturing lifecycle.

The ideal candidate will have a B.S. or M.S. in Electrical Engineering or a related field, along with 2–3 years of experience in high‑voltage SiC product engineering. You will be responsible for executing device characterization, developing test plans, and collaborating with cross‑functional teams.