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Navitas Semiconductor is seeking a Product Engineer – SiC in Torrance, California to support the development and production of high‑voltage Silicon Carbide power devices, ensuring robust performance throughout the manufacturing lifecycle.
The ideal candidate will have a B.S. or M.S. in Electrical Engineering or a related field, along with 2–3 years of experience in high‑voltage SiC product engineering. You will be responsible for executing device characterization, developing test plans, and collaborating with cross‑functional teams.
Navitas Semiconductor (Nasdaq: NVTS) is a next‑generation power semiconductor leader driving innovation in gallium nitride (GaN) and high‑voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high‑performance computing, energy and grid infrastructure, and industrial electrification.
This role supports the development and production of high‑voltage Silicon Carbide power devices spanning the 650 V to 10 kV range. It helps ensure robust electrical performance, manufacturability, yield, reliability, and customer quality from initial silicon bring‑up through high‑volume manufacturing and field deployment.