Senior IPT Lead — RF Microelectronics & Modules

Prattwhitney

Andover (MA)

On-site

USD 108,000 - 205,000

Full time

14 days+
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Benefits offered by this job

Medical insurance
Dental insurance
Vision insurance
Life insurance
401(k) match
Flexible schedules
Paid time off
Parental leave

Job summary

Raytheon is seeking a Principal Integrated Product Team Lead in Andover, MA, within the RF Microelectronics/Module Design & Foundry Services Department. You will drive flawless technical, schedule, and cost performance for semiconductor and RF module development programs and ensure on-time, on-budget delivery.

The role requires a STEM degree, 8+ years of IPT/PM experience, and the ability to obtain a U.S. security clearance. Collaboration with cross-functional teams and SBUs is essential.

Qualifications

  • Bachelor's degree in STEM field required.
  • 8+ years of experience in technical projects and IPT/PM roles.
  • Ability to obtain and maintain US security clearance; US citizenship required.

Responsibilities

  • Manage Integrated Product Teams.
  • Coordinate multiple technology development programs from $30K to $5M in value.
  • Collaborate with cross-functional teams to meet goals, ensuring on-time, on-budget performance.
  • Formulate and present Estimate-At-Completion (EAC) activities.
  • Lead Transition To Production (TTP) activities and coordinate with Production.

Skills

IPT leadership
Program management
EVMS
Cost estimation
Communication

Education

Bachelor’s Degree in STEM

Tools

EVMS techniques

Job description

Raytheon is seeking a Principal Integrated Product Team Lead in Andover, MA, within the RF Microelectronics/Module Design & Foundry Services Department. You will drive flawless technical, schedule, and cost performance for semiconductor and RF module development programs and ensure on-time, on-budget delivery.

The role requires a STEM degree, 8+ years of IPT/PM experience, and the ability to obtain a U.S. security clearance. Collaboration with cross-functional teams and SBUs is essential.

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