Principal In-Process RF Test Engineer (GaAs/GaN)

Choosecolumbusga; Andover (MA); On-site; USD 108,000 - 205,000; Full time

Job summary

Raytheon in Andover, MA, seeks a Principal Semiconductor Fab In-Process RF Test Engineer to join the RF Microelectronics/Module Development & Foundry Services team. The role tests GaAs/GaN MMICs and test structures on production equipment with close attention to yield and reliability.

The ideal candidate has 10+ years of RF testing experience, a STEM degree, and the ability to obtain a U.S. security clearance. This is an on-site role based in Andover, MA.

Qualifications

• Bachelor's degree in a Science, Technology, Engineering & Math field required.
• Over ten years of RF semiconductor testing experience; advanced degree may count for up to 3 years.
• Must be able to obtain and maintain a U.S. security clearance; U.S. citizenship required.

Responsibilities

• Perform in-process RF measurements on GaAs/GaN devices and test structures.
• Improve test procedures and address test-related yield issues.
• Consult on equipment purchases to enhance test speed, accuracy, throughput.
• Drive install, qualification, and process matching of new test equipment; mentor staff.

Skills

RF test engineering

Test measurements

Multitasking & prioritization

Education

Bachelor's Degree in STEM

Master's degree in STEM

Tools

Test equipment

SPC software

Root cause analysis tools

Job description

Raytheon in Andover, MA, seeks a Principal Semiconductor Fab In-Process RF Test Engineer to join the RF Microelectronics/Module Development & Foundry Services team. The role tests GaAs/GaN MMICs and test structures on production equipment with close attention to yield and reliability.

The ideal candidate has 10+ years of RF testing experience, a STEM degree, and the ability to obtain a U.S. security clearance. This is an on-site role based in Andover, MA.