Senior Electron Microscopy Engineer

Instruct-ERIC; Texas; On-site; USD 150,000 - 210,000; Full time

Job summary

Applied Optoelectronics, Inc. (AOI) seeks a Senior Electron Microscopy Engineer to drive advanced microscopy for semiconductor laser failure analysis and yield improvement.

The candidate will lead expert analyses using FIB, SEM, EDX/EDS, TEM/STEM, HRTEM, and electron diffraction, with emphasis on defect formation and process origins. The role requires deep crystallography knowledge, hands-on FIB sample prep, and the ability to connect microscopy observations to device performance and

Qualifications

• Ph.D. required with 5+ years of industrial experience.
• Expert in advanced electron microscopy techniques (FIB, SEM, TEM/STEM, EDX/EDS, HRTEM).
• Strong knowledge of crystallography, semiconductor defects, and defect-formation mechanisms.
• Familiar with semiconductor laser materials and device fabrication processes.

Responsibilities

• Perform advanced electron microscopy analysis to identify defects, interfaces, and failure mechanisms.
• Develop advanced FIB sample-preparation methods for TEM and cross-sectional analyses.
• Analyze crystallographic and process-induced defects and determine origins.
• Correlate microscopy results with epitaxy, wafer fabrication, device performance, and yield data.
• Oversee microscopy lab operations, equipment performance, and SOPs; train staff.
• Prepare technical reports and present findings to teams and management.

Skills

Microscopy expertise

Lab leadership

Cross-functional collaboration

Education

Ph.D. in Materials Science, Physics, Electrical Engineering, or related field

Tools

FIB

SEM

EDX/EDS

TEM/STEM

HRTEM

Electron diffraction

Job description

Jobs in Structural Biology and Related Fields

Texas, United States

Applied Optoelectronics, Inc. (AOI) is seeking a Senior Electron Microscopy Engineer to support semiconductor laser failure analysis, process troubleshooting, and yield improvement.

The successful candidate will be a subject-matter expert in FIB, SEM, EDX/EDS, TEM/STEM, HRTEM, and electron diffraction, with strong expertise in advanced FIB sample preparation and semiconductor defect analysis. A key expectation of this position is the ability to identify structural defects, understand their formation mechanisms, and connect microscopy observations to semiconductor materials, fabrication processes, device performance, and reliability.

Job Duties

• Perform advanced electron microscopy analysis using FIB, SEM, EDX/EDS, TEM/STEM, HRTEM, and electron diffraction to identify defects, interfaces, compositional abnormalities, and failure mechanisms.
• Develop advanced FIB sample-preparation methods, including site-specific cross-sectional TEM lamella preparation, plan-view TEM preparation, low-damage thinning, and preparation of challenging semiconductor device structures.
• Analyze crystallographic and process-induced defects such as dislocations, stacking faults, interface defects, regrowth defects, contamination, and other microstructural abnormalities, with emphasis on understanding their formation mechanisms and process origins.
• Correlate microscopy results with epitaxy, wafer-fabrication processes, device performance, reliability testing, and yield data to support root-cause analysis and process improvement.
• Oversee microscopy laboratory operations, equipment performance, analytical methods, and sample-preparation capabilities.
• Develop and maintain SOPs and analytical procedures, and train technicians and engineers in microscopy operation, sample preparation, and data interpretation.
• Collaborate with Process Engineering, Epitaxy, Yield, Reliability, Quality, and R&D teams to investigate product failures and manufacturing issues.
• Work with equipment vendors, universities, and external laboratories to introduce advanced microscopy technologies and expand analytical capability.
• Prepare technical reports and clearly present analysis results, defect mechanisms, root-cause conclusions, and recommendations to technical teams and management.

Qualifications

• Ph.D. in Materials Science, Physics, Electrical Engineering, or a related field with 5+ years of relevant industrial experience, or equivalent industrial experience demonstrating comparable technical expertise.
• Recognized expertise in advanced electron microscopy, including FIB, SEM, EDX/EDS, TEM/STEM, HRTEM, and electron diffraction, with deep hands-on experience in advanced FIB sample preparation such as plan-view TEM specimens and site-specific cross-sectional lamellae.
• Strong knowledge of crystallography, semiconductor defects, and defect-formation mechanisms, with demonstrated ability to identify defects and determine their likely materials or process origins.
• Strong knowledge of semiconductor devices and manufacturing processes, preferably compound semiconductor lasers, including epitaxy, e-beam lithography, photolithography, wet and dry etching, PVD, CVD, metallization, and epitaxial regrowth.

Preferred Experience

• Experience with InP, InGaAs, InGaAsP, DFB lasers, EMLs, quantum-well structures, buried heterostructures, and semiconductor laser failure analysis is highly desirable.