RF Technology Development Device Engineer - MTS

GlobalFoundries

Essex (VT)

On-site

USD 98,000 - 176,000

Full time

14 days+

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Job summary

GlobalFoundries is seeking an RF Technology Development Device Engineer in Essex Junction, VT. The successful candidate will conduct TCAD simulations and engage in device fabrication, design, and analysis for SiGe HBTs and RF CMOS devices. Required qualifications include a Master’s Degree or PhD in relevant fields and 3+ years of semiconductor analysis experience. The role offers a competitive salary ranging from $98,000 to $176,000, depending on qualifications and experience.

Qualifications

  • 3+ years in semiconductor device analysis and TCAD.
  • Experience with SiGe CMOS or SiGe BiCMOS device analysis.
  • Fluency in English language.

Responsibilities

  • Conduct TCAD simulations and electrical characterization.
  • Work closely with process integration for device fabrication.
  • Innovate methods for continuous improvement.

Skills

Silicon CMOS expertise
TCAD simulation
RF device design and characterization
Data analysis
Strong communication skills

Education

Master’s Degree or PhD in relevant discipline

Tools

Cadence

Job description

RF Technology Development Device Engineer - MTS page is loaded## RF Technology Development Device Engineer - MTSlocations: Essex Junctiontime type: Full timeposted on: Posted Todayjob requisition id: JR-2601731**About GlobalFoundries:**GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.**Summary of Role:**GlobalFoundries is a leading full-service semiconductor foundry with a global manufacturing footprint spanning three continents. GlobalFoundries' RF Technology Development Organization is looking for a device and TCAD engineer with industry experience in developing semiconductor technologies to join our RF team in Essex Junction, VT.**Essential Responsibilities*** You will be responsible for TCAD simulation, design, electrical characterization and analysis of SiGe HBTs and RF CMOS devices* Conduct theoretical studies or simulations to optimize the device performance and benchmark it against state of the art* Work closely with process integration team for device fabrication work.* Establish new technology design rules, test structures and test methodologies* You will be responsible for the DC and RF characterization and analysis including high power measurements, s-parameter and loadpull* Own and drive technical process problem solving.* Data analysis* Team player* Interact with internal & external customers and respond to technical queries.* Innovate new methods of continuous process/device improvement.* Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements**Other Responsibilities:**· Perform all activities in a safe and responsible manner and support all Environmental, Health, Safety & Security requirements and programs.**Required Qualifications:*** Education: Master’s Degree or PhD in Electrical, Materials Science, or other relevant engineering or physical science discipline. BS + 6-7 years of experience or MS + 5-6 years or PhD + 3-4 years* Years of Experience: 3+ years in semiconductor device analysis and TCAD* Experience in Silicon CMOS or SiGe BiCMOS TCAD and device analysis* RF device design and characterization experience* Experience with Cadence or any other layout and simulation tool* Strong data analysis skills* Fluency in English Language – written & verbal* Ability to relocate to Essex Junction, VT**Preferred Qualifications:*** 5+ Years of Experience in Silicon or SiGe BiCMOS TCAD and device analysis* Experience of leading a device or process development project* Experience in RF device design and characterization including high frequency design, measurement and analysis* Experience in noise figure and loadpull measurement and analysis* Excellent interpersonal skills, energetic, motivated, and self-driven* Demonstrate ability to work well within a global matrixed team or environment with minimal supervision* Outstanding communication skills - both written and verbal* Demonstrated ability to communicate well with all levels of the organization and experience in working with external constituencies* Strong organizational skills; demonstrated ability to manage multiple tasks simultaneously and able to react to shifting priorities to meet business needs* Demonstrated ability to meet deadlines and commitments**Expected Salary Range**$98,000.00 - $176,000.00The exact Salary will be determined based on qualifications, experience and location.If you need a reasonable accommodation for any part of the employment process, please contact us by email at usaccommodations@gf.com and let us know the nature of your request and your contact information. Requests for accommodation will be considered on a case-by-case basis. Please note that only inquiries concerning a request for reasonable accommodation will be responded to from this email address.An offer with GlobalFoundries is conditioned upon the successful completion of pre-employment conditions, as applicable, and subject to applicable laws and regulations.GlobalFoundries is fully committed to equal opportunity in the workplace and believes that cultural diversity within the company enhances its business potential. GlobalFoundries goal of excellence in business necessitates the attraction and retention of highly qualified people. Artificial barriers and stereotypic biases detract from this objective and may be illegally discriminatory.All policies and processes which pertain to employees including recruitment, selection, training, utilization, promotion, compensation, benefits, extracurricular programs, and termination are created and implemented without regard to age, ethnicity, ancestry, color, marital status, medical condition, mental or physical disability, national origin, race, religion, political and/or third-party affiliation, sex, sexual orientation, gender identity or expression, veteran status, or any other characteristic or category specified by local, state or federal law
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