RF Chiplet Design Engineer - Heterogeneous Integration

Imec

Kissimmee (FL)

Presencial

USD 120.000 - 180.000

Jornada completa

14 días+
Generador de candidaturas

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Descripción de la vacante

imec USA’s Kissimmee, Florida R&D Center is advancing RF heterogeneous integration technologies for ultra-high-frequency applications. You will co-design and simulate CMOS and III-V devices on silicon interposers, balancing performance with manufacturability.

You will work with a multidisciplinary team across the US and Belgium, developing building blocks, performing tapeouts, and contributing to technical publications and prototypes for real-world applications.

Formación

  • PhD or Master’s degree in electrical engineering or a related field with 3+ years of relevant experience.
  • Proficiency with Cadence Virtuoso for CMOS chiplet design and tapeout.
  • Experience using Keysight ADS and Ansys HFSS for RF/electromagnetic simulations.

Responsabilidades

  • Design RF building blocks such as phase shifters, frequency multipliers, power amplifiers, and PLLs for heterogeneous integration.
  • Use electromagnetic simulation to extract parasitics and inform co-design.
  • Design and tape out advanced CMOS circuits using Cadence Virtuoso and related tools.
  • Design and tape out III-V circuits using RF design tools (Keysight ADS) and HFSS simulations.
  • Co-design interconnects between active chiplets and RF interposers.
  • Evaluate tradeoffs among RF performance, signal integrity, packaging, and manufacturability.
  • Participate in design reviews and produce technical documentation and reports.
  • Collaborate with imec teams in the US and Belgium and with external customers/partners.

Conocimientos

Strong written & verbal communication
Multidisciplinary teamwork
Self-driven

Educación

PhD or Master’s in Electrical Engineering or related field
3+ years of relevant experience

Herramientas

Cadence Virtuoso
Keysight ADS
Ansys HFSS

Descripción del empleo

imec USA’s Kissimmee, Florida R&D Center is advancing RF heterogeneous integration technologies for ultra-high-frequency applications. You will co-design and simulate CMOS and III-V devices on silicon interposers, balancing performance with manufacturability.

You will work with a multidisciplinary team across the US and Belgium, developing building blocks, performing tapeouts, and contributing to technical publications and prototypes for real-world applications.

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