A leading semiconductor company in California is seeking a Principal SiC Device Technologist to drive development and optimization of SiC power devices, including MOSFETs and IGBTs. Ideal candidates will possess a degree in Electrical Engineering or Physics, with at least 5 years of experience in semiconductor device development and a deep understanding of power semiconductor physics. Strong analytical skills, technical communication, and the ability to work across cultures are essential. The role may involve travel up to 25%.
Qualifications
Minimum 5 years of experience in SiC power device development.
Strong understanding of power semiconductor physics.
Experience scaling 150 mm to 200 mm power SiC technology.
Responsibilities
Lead the simulation, design, and optimization of SiC power devices.
Define and optimize SiC epitaxy and fabrication.
Drive device technology roadmap and act as technical liaison.
Coordinate electrical characterization and failure analysis.
Define strategy for technology qualification and ensure reliability.
Provide data for TCAD and SPICE model calibration.
Skills
Analytical skills
Technical communication
Cross-cultural teamwork
SiC design knowledge
Power manufacturing familiarity
High-voltage application experience
Leadership
Willingness to travel
Education
Degree in Electrical Engineering, Physics, or equivalent
PhD or Masters in Electrical Engineering, Physics, or equivalent
Job description
A leading semiconductor company in California is seeking a Principal SiC Device Technologist to drive development and optimization of SiC power devices, including MOSFETs and IGBTs. Ideal candidates will possess a degree in Electrical Engineering or Physics, with at least 5 years of experience in semiconductor device development and a deep understanding of power semiconductor physics. Strong analytical skills, technical communication, and the ability to work across cultures are essential. The role may involve travel up to 25%.