Principal SiC Device Technologist

Navitas Semiconductor; Torrance (CA); On-site; USD 120,000 - 160,000; Full time

Job summary

A leading semiconductor company in California is seeking a Principal SiC Device Technologist to drive development and optimization of SiC power devices, including MOSFETs and IGBTs. Ideal candidates will possess a degree in Electrical Engineering or Physics, with at least 5 years of experience in semiconductor device development and a deep understanding of power semiconductor physics. Strong analytical skills, technical communication, and the ability to work across cultures are essential. The role may involve travel up to 25%.

Qualifications

• Minimum 5 years of experience in SiC power device development.
• Strong understanding of power semiconductor physics.
• Experience scaling 150 mm to 200 mm power SiC technology.

Responsibilities

• Lead the simulation, design, and optimization of SiC power devices.
• Define and optimize SiC epitaxy and fabrication.
• Drive device technology roadmap and act as technical liaison.
• Coordinate electrical characterization and failure analysis.
• Define strategy for technology qualification and ensure reliability.
• Provide data for TCAD and SPICE model calibration.

Skills

Analytical skills

Technical communication

Cross-cultural teamwork

SiC design knowledge

Power manufacturing familiarity

High-voltage application experience

Leadership

Willingness to travel

Education

Degree in Electrical Engineering, Physics, or equivalent

PhD or Masters in Electrical Engineering, Physics, or equivalent

Job description

Navitas Semiconductor (Nasdaq: NVTS) is a next‑generation power semiconductor leader driving innovation in gallium nitride (GaN) and high‑voltage silicon carbide (SiC) technologies. Our products enable faster, more efficient power delivery across AI data centers, high‑performance computing, energy and grid infrastructure, and industrial electrification. With more than 30 years of combined expertise in wide bandgap technologies, GaNFast™ power ICs integrate GaN power, drive, control, sensing, and protection, delivering faster power delivery, higher system density, and greater efficiency. GeneSiC™ high‑voltage SiC devices leverage patented trench‑assisted planar technology to provide industry‑leading voltage capability, efficiency, and reliability for medium‑voltage grid and infrastructure applications.

We are seeking a Principal SiC Device Technologist to join our fast‑growing, collaborative team. The ideal candidate is self‑motivated, energetic, and able to thrive in a high‑growth, innovative environment, contributing directly to technologies that are shaping the future of power electronics. The Principal SiC Device Technologist drives the development and optimization of Navitas next‑generation SiC power devices, such as MOSFETs, IGBTs, and Schottky Barrier Diodes (SBDs) ranging from 1200 V to 10 kV and beyond. This role involves leading R&D efforts from concept to volume manufacturing, specializing in device physics, process integration, and reliability.

Key Responsibilities

• Device Design and Optimization: Lead the simulation, design, and performance optimization of next‑generation SiC power devices to improve efficiency, power density, and reliability.
• Process Integration & Development: Define and optimize SiC epitaxy, fabrication, and process integration to enhance yield.
• Technical Leadership: Drive the device technology roadmap, acting as a key technical liaison between design, fabrication, foundry, and packaging teams.
• Characterization and Testing: Coordinate detailed electrical characterization, parameter extraction, and failure analysis of SiC devices.
• Reliability & Qualification: Work with internal and external teams to define the strategy for technology qualification and ensure that new SiC technology platforms meet reliability standards.
• TCAD Modeling: Improve predictive modeling by providing data for TCAD and SPICE model calibration.

Key Skills

• Strong analytical and problem‑solving skills.
• Excellent technical communication and negotiation abilities.
• Comfortable working across cultures and global time zones.
• Strong knowledge of SiC design and fabrication methodologies.
• Familiarity with power manufacturing ecosystem including vendors and OSATs.
• Experience with high‑voltage and high‑reliability applications.
• Leading by example.
• Ability to travel up to 25%.

Qualifications

Required Qualifications:

• Degree in Electrical Engineering, Physics, or equivalent.
• Minimum 5 years of industrial experience in SiC power device development, characterization, and/or process integration.
• Deep understanding of power semiconductor physics, particularly wide‑bandgap devices (SiC, GaN).
• Strong understanding of wide‑bandgap (WBG) semiconductor material properties, device physics (especially SiC MOSFETs), and MOS interface traps.
• Experience with scaling 150 mm to 200 mm power SiC technology.

Preferred Qualifications:

• PhD or Masters in Electrical Engineering, Physics, or equivalent.
• 10 years of industrial experience in SiC power device development, characterization, and/or process integration.
• Demonstrated experience working with external foundries is preferred.
• Strong data analytics skills and exposure to machine learning for test optimization.
• Strong understanding of wide‑bandgap (WBG) semiconductor material properties, device physics (especially SiC MOSFETs), and MOS interface traps.