Next-Gen, High-Speed HBM, LPDDR Memory Subsystem ASIC Digital Design Engineer

Qualcomm

San Diego (CA)

On-site

USD 140,000 - 210,000

Full time

14 days+
Application generator

A complete application in a minute — tailored resume and cover letter, ready to send.

Get past ATS filters

Benefits offered by this job

Annual discretionary bonus
Annual RSU grants
Extensive benefits package

Job summary

Qualcomm is seeking a Senior ASIC Design Engineer to develop high-speed memory and cache controller designs. The role involves architecture, RTL coding, and collaboration with verification teams to ensure high-quality outputs.

The ideal candidate will have a Bachelor's or Master's in Engineering with at least 5 years of ASIC design experience. The position offers a competitive salary range of $140,000 to $210,000 along with additional bonuses and extensive benefits.

Qualifications

  • 5+ years ASIC design, RTL coding, and front-end digital design experience.
  • 3+ years Hardware Architecture experience.
  • Exposure to RTL Design Verification flows.

Responsibilities

  • Debugging designs and providing integration support.
  • Implementing and delivering RTL for high-speed memory subsystems.
  • Driving micro-architecture of logic designs.

Skills

ASIC design
RTL coding
Front-end digital design
Hardware Architecture
High-speed digital design
LPDDR memory design

Education

Bachelor's degree in Science, Engineering, or related field
Master's degree in Computer Engineering or Electrical Engineering

Job description

Company

Qualcomm Technologies, Inc.

Job Area

Engineering Group, Engineering Group > ASICS Engineering

General Summary

Next Generation, High-Speed, Memory and Cache Controller and Advanced Memory NoCs based Subsystem Design Team is looking for Senior ASIC Design Engineers for the next generation high-speed HBM/LPDDR/DDR memory subsystems. The front end of the DDR controller interfaces to the rest of the system such as CPU, GPU, DSP, and Multimedia Processors, and the engineer is expected to enable high-speed (1GHz+) designs in QCT products. The candidate will work on architecture, design (RTL coding), and deployment of the next-generation high-speed memory subsystems into QCT products, develop architecture and design specifications, drive micro-architecture of portions of the logic design, implement and deliver RTL, and work with verification engineers to deliver high-quality designs. Responsibilities include debugging designs, providing debug support during chip integration, synthesis, timing closure, physical design support, gate-level simulations, and power analysis, and making regular contributions to improve design methodology, productivity, and quality of results.

Qualifications
  • Bachelor's or Master’s degree in Science, Engineering, or related field.
  • 5+ years ASIC design, RTL coding, and front-end digital design experience.
  • 3+ years Hardware Architecture experience.
Preferred Qualifications
  • 3–10 years of ASIC design (RTL coding).
  • Exposure to RTL Design Verification flows.
  • 3+ years of direct Hardware Architecture experience.
  • Bachelor’s degree in Electrical or Computer Engineering with at least 5+ years of high-speed digital design experience (Master’s degree preferred).
  • Experience with LPDDR memory and cache controller, NoC-based architectures interfacing to CPUs, DSPs, and multimedia processors.
  • Exposure to HBM memory type designs.
  • On-chip tightly coupled SRAM & L3 cache controller architecture/design.
  • Experience with x86 or ARM CPU/bus architectures.
  • Ordering of memory transactions and methods to enforce proper ordering to conform to ISA architecture specifications.
Education Requirements

Required: Bachelor’s, Computer Engineering and/or Electrical Engineering. Preferred: Master’s, Computer Engineering and/or Electrical Engineering.

Minimum Qualifications
  • Bachelor’s degree in Science, Engineering, or related field and 4+ years of ASIC design, verification, validation, integration, or related work experience.
  • Master’s degree in Science, Engineering, or related field and 3+ years of ASIC design, verification, validation, integration, or related work experience.
  • PhD in Science, Engineering, or related field and 2+ years of ASIC design, verification, validation, integration, or related work experience.
Pay range and Other Compensation & Benefits

Pay range: $140,000.00 – $210,000.00. Additional compensation includes a competitive annual discretionary bonus program and opportunities for annual RSU grants. Extensive benefits package supports success at work, at home, and in play.

EEO Employer

Qualcomm is an equal opportunity employer; all qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, gender identity, national origin, disability, Veteran status, or any other protected classification.

Get your free, confidential resume review.
or drag and drop your file here.
Similar jobs

Similar jobs worth comparing

Next-Gen, High-Speed HBM, LPDDR Memory Controller ASIC Digital Design Engineer
Next-Gen, High-Speed HBM, LPDDR Memory Controller ASIC Digital Design Engineer

Qualcomm • San Diego (CA)

On-site
USD 140,000 - 230,000
Annual bonus program
RSU grants
Benefits package
Memory Control Design Engineer
Memory Control Design Engineer

Qualcomm • San Diego (CA)

On-site
USD 115,000 - 174,000
Competitive annual discretionary bonus
Annual RSU grants
Highly competitive benefits package
San Diego, California, United States of America ASICS Engineering Posted a day ago
San Diego, California, United States of America ASICS Engineering Posted a day ago

Qualcomm • San Diego (CA), Northern (KY)

Hybrid
USD 140,000 - 210,000
ASIC/RTL Design Engineer for High-speed Interfaces
ASIC/RTL Design Engineer for High-speed Interfaces

Nutanix • San Diego (CA)

On-site
USD 140,000 - 210,000
ASIC/RTL Design Engineer for High-speed Interfaces
ASIC/RTL Design Engineer for High-speed Interfaces

Qualcomm • San Diego (CA)

On-site
USD 140,000 - 210,000
Senior ASIC Designer, High-Speed Memory Subsystems (HBM/LPDDR)
Senior ASIC Designer, High-Speed Memory Subsystems (HBM/LPDDR)

Qualcomm • San Diego (CA)

On-site
USD 140,000 - 210,000
Annual discretionary bonus
Annual RSU grants
Extensive benefits package
Senior ASIC Design Engineer, High-Speed Memory (RSU Eligible)
Senior ASIC Design Engineer, High-Speed Memory (RSU Eligible)

Qualcomm • San Diego (CA), Northern (KY)

Hybrid
USD 140,000 - 210,000
Staff Memory Controller Architecture and Design Engineer
Staff Memory Controller Architecture and Design Engineer

Qualcomm • San Diego (CA)

On-site
USD 140,000 - 210,000
Senior High-Speed Memory Controller ASIC Engineer
Senior High-Speed Memory Controller ASIC Engineer

Qualcomm • San Diego (CA)

On-site
USD 140,000 - 230,000
Annual bonus program
RSU grants
Benefits package
Memory Designer
Memory Designer

Qualcomm • San Diego (CA)

On-site
USD 164,000 - 246,000
Competitive annual discretionary bonus
Annual RSU grants
Comprehensive benefits package