Intern: Next-Gen DRAM Process Integration Engineer

Micron; Boise (ID); On-site; USD 55,000 - 85,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off and holidays

Competitive benefits package

Job summary

Micron Technology in Boise invites a PhD candidate in Materials Science and Electrical Engineering to join the 3D DRAM organization. You will work on integration and device-level challenges, focusing on performance and manufacturability in a cutting‑edge 300mm R&D facility.

The role emphasizes cross‑functional collaboration and hands‑on experimentation. Ideal candidates will have strong data analysis skills, a passion for semiconductor innovation, and a drive to advance memory technology while

Qualifications

• Active PhD candidate in a relevant field with a focus on semiconductor devices.
• Strong background in materials science, electrical engineering or physics.
• Experience with device fabrication, characterization, and data analysis is preferred.

Responsibilities

• Contribute to technology development for next generation DRAM components and devices.
• Analyze inline, parametric, and probe data to evaluate performance and reliability.
• Collaborate with process development, product engineering, design, and yield teams.
• Design and run experiments in the R&D fabrication environment.
• Summarize complex problems and propose actionable improvements.

Skills

Data analysis

Collaboration skills

Semiconductor industry interest

Education

PhD candidate in Materials Science and Electrical Engineering

PhD in Physics or Chemical Engineering acceptable

Job description

Micron Technology in Boise invites a PhD candidate in Materials Science and Electrical Engineering to join the 3D DRAM organization. You will work on integration and device-level challenges, focusing on performance and manufacturability in a cutting‑edge 300mm R&D facility.

The role emphasizes cross‑functional collaboration and hands‑on experimentation. Ideal candidates will have strong data analysis skills, a passion for semiconductor innovation, and a drive to advance memory technology while