3D DRAM Process Integration Intern — R&D Innovator

1000 Micron Technology, Inc.; Boise (ID); On-site; USD 85,000 - 110,000; Full time

Job summary

Micron Technology, Inc. in Boise, Idaho, invites a process integration engineer to join the 3D DRAM organization in our 300mm R&D facility.

You will focus on the performance and manufacturability of next‑generation memories, working with device components, charge storage devices, and thin‑film transistors, to advance memory scaling. The role requires a PhD candidate in Materials Science and Electrical Engineering (PhD in physics or chemical engineering acceptable).

Qualifications

• Pursuing PhD in materials science/electrical engineering or PhD in physics/chemical engineering acceptable.
• Focus on semiconductor device fabrication, electrical and material characterization preferred.
• Strong data analysis and modeling skills preferred.

Responsibilities

• Contribute to technology development for next-gen DRAM devices.
• Optimize process flows and develop creative solutions for product requirements.
• Collaborate with cross-functional teams to resolve performance and yield issues.
• Design and run experiments in the R&D fab.
• Analyze inline, parametric, and probe data to understand failure mechanisms.
• Summarize complex problems and drive actions to implement solutions.

Skills

Data analysis

Modeling

Collaboration

Education

PhD candidate in Materials Science and Electrical Engineering

PhD in Physics or Chemical Engineering acceptable

Job description

Micron Technology, Inc. in Boise, Idaho, invites a process integration engineer to join the 3D DRAM organization in our 300mm R&D facility.

You will focus on the performance and manufacturability of next‑generation memories, working with device components, charge storage devices, and thin‑film transistors, to advance memory scaling. The role requires a PhD candidate in Materials Science and Electrical Engineering (PhD in physics or chemical engineering acceptable).