DRAM Process Integration Intern — Next-Gen Memory

1000 Micron Technology, Inc.; Boise (ID); On-site; USD 28,000 - 41,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. in Boise, Idaho, is seeking a 3D DRAM Process Integration Engineer Intern to support development of next-generation memory technologies.

You will work with multidisciplinary teams on device performance, reliability, and manufacturability in a state‑of‑the‑art R&D facility. The internship offers hands-on experimentation, data analysis, and opportunities to apply AI-assisted tools to optimize processes and yield, with exposure to process development, design, and reliability

Qualifications

• Currently pursuing a PhD in Materials Science, Physics, Chemical Engineering, or a related technical field.
• Research experience in semiconductor device fabrication, electrical characterization, material characterization, or a related semiconductor field.
• Understanding of semiconductor device physics and process integration concepts.
• Experience designing experiments and analyzing technical data to support engineering decisions.
• Strong written and verbal communication skills with the ability to present complex technical findings clearly.

Responsibilities

• Contribute to the development of next-generation DRAM technologies, including advanced memory device components such as charge storage structures and thin-film transistors.
• Design, complete, and analyze experiments within the R&D fabrication environment to support technology development objectives.
• Collaborate with process development, product engineering, design, probe, yield enhancement, characterization, and reliability teams to resolve performance and yield challenges.
• Analyze inline, electrical, and probe data to identify operating mechanisms, variability sources, reliability risks, and optimization opportunities.
• Leverage approved AI and AI-assisted tools to support engineering analysis, data interpretation, productivity improvements, and technology development activities.

Skills

Device physics

Data analysis

Experiment design

Communication

AI tools

Education

PhD in Materials Science/Physics/Chemical Engineering or related

Tools

AI tools

Job description

Micron Technology, Inc. in Boise, Idaho, is seeking a 3D DRAM Process Integration Engineer Intern to support development of next-generation memory technologies.

You will work with multidisciplinary teams on device performance, reliability, and manufacturability in a state‑of‑the‑art R&D facility. The internship offers hands-on experimentation, data analysis, and opportunities to apply AI-assisted tools to optimize processes and yield, with exposure to process development, design, and reliability