DRAM Process Integration Intern - Innovate in Memory Tech

Micron Technology, Inc; Boise (ID); On-site; USD 42,000 - 54,000; Full time

Job summary

Micron Technology, Inc. in Boise, Idaho, invites PhD candidates to join our research team focused on next-generation DRAM technology.

You will contribute to device fabrication research, run experiments in the R&D fab, and work with cross-functional teams to optimize processes and improve device performance. We seek students who are pursuing a PhD in Materials Science, Electrical Engineering, or related fields and who cannot graduate before September 2027.

Qualifications

• Currently pursuing a PhD; graduation after Sept 2027 required.
• PhD in Materials Science and Electrical Engineering preferred; Physics/Chemical Engineering acceptable.
• Focus on semiconductor device fabrication and electrical/material characterization preferred.

Responsibilities

• Contribute to technology development for next-generation DRAM and device components.
• Optimize process flows and develop solutions to meet product requirements.
• Collaborate with cross-functional teams to address performance and yield issues.
• Design and run experiments in the R&D fab.
• Analyze inline, parametric, and probe data to evaluate operating and failure mechanisms.
• Summarize complex problems and drive actions to implement solutions.

Skills

Data analysis

Modeling

Collaboration

Semiconductor industry interest

Education

PhD in Materials Science & Electrical Engineering

PhD in Physics & Chemical Engineering

Job description

Micron Technology, Inc. in Boise, Idaho, invites PhD candidates to join our research team focused on next-generation DRAM technology.

You will contribute to device fabrication research, run experiments in the R&D fab, and work with cross-functional teams to optimize processes and improve device performance. We seek students who are pursuing a PhD in Materials Science, Electrical Engineering, or related fields and who cannot graduate before September 2027.