DRAM Process Integration Intern: Innovate Memory Tech

Micron Technology; Boise (ID); On-site; USD 34,000 - 55,000; Part time

Job summary

Micron Technology in Boise, Idaho, invites applications for a 3D DRAM Process Integration Engineer Intern to support development of next-generation DRAM technologies with a focus on device performance, reliability, and manufacturability.

You will design and analyze experiments in the R&D fabrication environment, collaborate with process development, product engineering, design, probe, yield enhancement, characterization, and reliability teams to resolve performance and yield challenges, and

Qualifications

• Currently pursuing a PhD in Materials Science, Physics, Chemical Engineering, or a related technical field.
• Research experience in semiconductor device fabrication, electrical characterization, material characterization, or a related semiconductor field.
• Demonstrated understanding of semiconductor device physics and process integration concepts.
• Experience designing experiments and analyzing technical data to support engineering decisions.
• Strong written and verbal communication skills with the ability to present complex technical findings clearly.

Responsibilities

• Contribute to the development of next-generation DRAM technologies, including advanced memory device components such as charge storage structures and thin-film transistors.
• Design, complete, and analyze experiments within the R&D fabrication environment to support technology development objectives.
• Collaborate with process development, product engineering, design, probe, yield enhancement, characterization, and reliability teams to resolve performance and yield challenges.
• Analyze inline, electrical, and probe data to identify operating mechanisms, variability sources, reliability risks, and optimization opportunities.
• Leverage approved AI and AI-Assisted tools to support engineering analysis, data interpretation, productivity improvements, and technology development activities.

Skills

Strong communication

Data-driven problem solving

Analytical mindset

Team collaboration

Education

PhD candidate

Semiconductor device fabrication

Electrical/material characterization

Experiment design & data analysis

Device physics & process integration

Job description

Micron Technology in Boise, Idaho, invites applications for a 3D DRAM Process Integration Engineer Intern to support development of next-generation DRAM technologies with a focus on device performance, reliability, and manufacturability.

You will design and analyze experiments in the R&D fabrication environment, collaborate with process development, product engineering, design, probe, yield enhancement, characterization, and reliability teams to resolve performance and yield challenges, and