Advanced DRAM Process Integration Engineer

Micron Technology, Inc; Boise, Northern (ID, KY); Hybrid; USD 30,000 - 40,000; Full time

Job summary

Micron Technology, Inc. is seeking a PhD candidate to contribute to next generation DRAM technology in our Boise, Idaho campus. The role focuses on device components and characterization, requiring rigorous data analysis and cross-functional collaboration to optimize processes and ensure device reliability.

The position emphasizes hands-on experiments in the R&D fab and close work with process development, product engineering, and design teams to drive innovative solutions in memory technology.

Qualifications

• Must be a current PhD student ( Materials Science and Electrical Engineering preferred).
• PhD in physics or chemical engineering acceptable if applicable.
• Interest in semiconductor device fabrication and characterization is preferred.

Responsibilities

• Contribute to technology development activities for next generation DRAM.
• Optimize process flows and develop creative solutions to meet product requirements.
• Collaborate with cross-functional teams to resolve performance and yield issues.
• Design and run experiments in the R&D fab.
• Analyze inline, parametric, and probe data to understand operating and failure mechanisms.
• Summarize complex problems and drive action across the team.

Skills

Data analysis

Modeling

Collaboration skills

Semiconductor industry interest

Education

PhD candidate in Materials Science and Electrical Engineering

PhD in Physics

Job description

Micron Technology, Inc. is seeking a PhD candidate to contribute to next generation DRAM technology in our Boise, Idaho campus. The role focuses on device components and characterization, requiring rigorous data analysis and cross-functional collaboration to optimize processes and ensure device reliability.

The position emphasizes hands-on experiments in the R&D fab and close work with process development, product engineering, and design teams to drive innovative solutions in memory technology.