DRAM Process Integration Intern — Next-Gen Memory

Micron Technology, Inc; Boise (ID); Hybrid; USD 34,000 - 55,000; Full time

Job summary

Micron Technology, Inc. invites applications for a 3D DRAM Process Integration Engineer Intern.

The role focuses on next‑generation DRAM technologies, device performance, reliability, and manufacturability, working in a state‑of‑the‑art 300mm R&D facility with multiple engineering disciplines. The ideal candidate is pursuing a PhD in Materials Science, Physics, or Chemical Engineering with experience in semiconductor fabrication and device physics, and is proficient in data‑driven problem

Qualifications

• Must be pursuing a PhD in a technical field.
• Experience in semiconductor device fabrication or electrical/material characterization.
• Strong understanding of semiconductor device physics and process integration concepts.
• Experience designing experiments and analyzing technical data.

Responsibilities

• Contribute to development of next‑generation DRAM technologies and components.
• Design, conduct, and analyze experiments in the R&D fabrication environment.
• Collaborate with cross‑functional teams to resolve performance and yield challenges.
• Analyze inline, electrical, and probe data to identify mechanisms and risks.
• Leverage AI tools to support analysis and productivity.

Skills

Semiconductor fabrication

Device physics

Data analysis

Experimental design

Communication skills

Education

PhD in Materials Science

PhD in Physics

PhD in Chemical Engineering

Job description

Micron Technology, Inc. invites applications for a 3D DRAM Process Integration Engineer Intern.

The role focuses on next‑generation DRAM technologies, device performance, reliability, and manufacturability, working in a state‑of‑the‑art 300mm R&D facility with multiple engineering disciplines. The ideal candidate is pursuing a PhD in Materials Science, Physics, or Chemical Engineering with experience in semiconductor fabrication and device physics, and is proficient in data‑driven problem