Intern, Advanced DRAM Cell & Device Engineering

Micron Technology; Boise (ID); On-site; USD 120,000 - 165,000; Full time

Job summary

Micron Technology's Boise R&D site seeks a DRAM Technology Development Engineer to define, develop, and optimize future DRAM cell and access device technologies. You will combine semiconductor device physics, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density, retention, reliability, and manufacturability.

You will collaborate with multi-functional teams to influence technology roadmaps and support the transition of new

Qualifications

• M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or a related technical field.
• Demonstrated knowledge of semiconductor device physics, including MOSFET operation, access devices, and capacitor fundamentals.
• Experience with electrical characterization, device testing, statistical analysis, and interpretation of large experimental data sets.
• Familiarity with DRAM operational concepts, including activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms, along with AI Proficiency.

Responsibilities

• Define electrical performance targets for DRAM access devices, capacitors, and cell stack elements, and evaluate new device architectures, materials, and integration schemes.
• Design and execute silicon experiments; perform electrical characterization and statistical analysis to find opportunities for device, process, and design improvements.
• Analyze array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention performance, and read/write operation interactions.
• Partner with modeling, design, process integration, and manufacturing teams to validate device behavior, optimize technology solutions, and support technology transfer to high-volume manufacturing.
• Apply AI-Assisted and Generative AI tools, where appropriate, to enhance data analysis, workflow efficiency, and technical decision-making.

Skills

Python

MATLAB

JMP

AI proficiency

Education

M.S. or Ph.D. in Electrical Engineering, Materials Science, Applied Physics, or related technical field

Tools

Synopsys Sentaurus

Silvaco

Job description

Micron Technology's Boise R&D site seeks a DRAM Technology Development Engineer to define, develop, and optimize future DRAM cell and access device technologies. You will combine semiconductor device physics, silicon experimentation, electrical characterization, and data-driven decision making to improve cell performance, density, retention, reliability, and manufacturability.

You will collaborate with multi-functional teams to influence technology roadmaps and support the transition of new