DRAM Cell & Device Engineer Intern — Next-Gen Memory

Micron Technology, Inc; Boise (ID); On-site; USD 110,000 - 160,000; Full time

Job summary

Micron Technology, Inc. in Boise, Idaho is seeking a DRAM Device & Cell Technology Engineer to define, develop, and optimize future DRAM cell and access device technologies.

You will collaborate with multi-functional teams to influence roadmaps and support transitions to manufacturing. The role combines semiconductor device physics, silicon experiments, electrical characterization, and data-driven decision making to improve cell performance and manufacturability, with AI tools to enhance

Qualifications

• MS or PhD in Electrical Engineering, Materials Science, Applied Physics, or a related technical field.
• Experience with electrical characterization, device testing, statistical analysis, and interpretation of large experimental data sets.
• Familiarity with DRAM operational concepts, including activation, sensing, retention, and disturb mechanisms.
• Proficiency with data analysis and scripting tools such as Python, MATLAB, JMP, or similar platforms, along with AI Proficiency.

Responsibilities

• Define electrical performance targets for DRAM access devices, capacitors, and cell stack elements, and evaluate new device architectures, materials, and integration schemes.
• Design and execute silicon experiments; perform electrical characterization and statistical analysis to find opportunities for device, process, and design improvements.
• Analyze array-level behavior including sensing margins, activation characteristics, disturb mechanisms, retention performance, and read/write operation interactions.
• Partner with modeling, design, process integration, and manufacturing teams to validate device behavior, optimize technology solutions, and support technology transfer to high-volume manufacturing.
• Apply AI-Assisted and Generative AI tools, where appropriate, to enhance data analysis, workflow efficiency, and technical decision-making.

Skills

Python

MATLAB

JMP

Data analysis

AI proficiency

Scripting

Education

MS or PhD in Electrical Engineering, Materials Science, Applied Physics, or related field

Tools

Synopsys Sentaurus

Silvaco

TCAD

Job description

Micron Technology, Inc. in Boise, Idaho is seeking a DRAM Device & Cell Technology Engineer to define, develop, and optimize future DRAM cell and access device technologies.

You will collaborate with multi-functional teams to influence roadmaps and support transitions to manufacturing. The role combines semiconductor device physics, silicon experiments, electrical characterization, and data-driven decision making to improve cell performance and manufacturability, with AI tools to enhance