DRAM Device & Cell Tech Engineer — Innovate Next-Gen Memory

Micron Technology, Inc; Boise (ID); On-site; USD 120,000 - 170,000; Full time

Job summary

Micron Technology, Inc in Boise, Idaho is seeking a Device Engineer to define and validate electrical specifications for DRAM and emerging memory technologies. You will characterize memory arrays, analyze electrical behavior, and influence process decisions that impact yield and performance.

The role requires strong semiconductor device physics knowledge, DRAM experience, and hands-on data analysis using JMP or Python.

Qualifications

• MS or PhD in EE/physics or related field required.
• Strong CMOS/diode device physics knowledge.
• Experience with DRAM, NAND, NOR or SRAM.
• Experience with DRAM array characterization and failure analysis.

Responsibilities

• Define and drive electrical specifications for DRAM and memory technologies.
• Design, implement, and interpret experiments to optimize cell performance.
• Develop physical and electrical models (TCAD/compact) to analyze performance limits.
• Create stress methodologies to evaluate device reliability (TDDB, leakage, endurance).
• Analyze array-level behavior using probe and backend data to improve yield and cost.
• Collaborate across process integration, design, and product teams to translate insights into improvements.

Skills

Semiconductor device physics

DRAM technology

DRAM array characterization

Data analysis & DOE

Python/JMP

Education

MS in Electrical Engineering, Physics, or related

PhD in Electrical Engineering, Physics, or related

Tools

JMP

Python

Job description

Micron Technology, Inc in Boise, Idaho is seeking a Device Engineer to define and validate electrical specifications for DRAM and emerging memory technologies. You will characterize memory arrays, analyze electrical behavior, and influence process decisions that impact yield and performance.

The role requires strong semiconductor device physics knowledge, DRAM experience, and hands-on data analysis using JMP or Python.