DRAM Innovation Intern: Advanced Cell & Device Engineering

Micron Technology, Inc; Boise (ID); Hybrid; USD 34,000 - 55,000; Full time

Job summary

Micron Technology, Inc. in Boise, Idaho invites an intern to contribute to advanced DRAM cell and device engineering. You will participate in defining electrical targets, designing silicon experiments, and analyzing device performance to drive future memory technologies.

The role requires a solid foundation in semiconductor physics, hands-on data analysis with Python/MATLAB/JMP, and a willingness to collaborate across engineering teams to enable technology transfer to manufacturing.

Qualifications

• Knowledge of semiconductor device physics including MOSFET operation and capacitor fundamentals.
• Experience with electrical characterization, device testing, and data interpretation.

Responsibilities

• Define electrical performance targets for DRAM devices and evaluate new architectures.
• Design and execute silicon experiments; perform electrical characterization and statistical analysis.
• Analyze array-level behavior including sensing margins and retention performance.
• Collaborate with modeling, design, process integration, and manufacturing teams to transfer technology to manufacturing.
• Apply AI-assisted analytics to improve data analysis and decision making.

Skills

Python

MATLAB

JMP

AI Proficiency

Education

MS or PhD in Electrical Engineering, Materials Science, Applied Physics

Tools

Synopsys Sentaurus

Silvaco

Job description

Micron Technology, Inc. in Boise, Idaho invites an intern to contribute to advanced DRAM cell and device engineering. You will participate in defining electrical targets, designing silicon experiments, and analyzing device performance to drive future memory technologies.

The role requires a solid foundation in semiconductor physics, hands-on data analysis with Python/MATLAB/JMP, and a willingness to collaborate across engineering teams to enable technology transfer to manufacturing.