DRAM Device & Cell Tech Engineer - Shape Next-Gen Memory

Micron Technology, Inc; Boise (ID); Hybrid; USD 120,000 - 180,000; Full time

Benefits offered by this job

Benefits

Job summary

Micron Technology, Inc. in Boise, Idaho seeks a DRAM Device & Cell Technology Engineer to define and optimize next-generation DRAM architectures, working with a cross-functional team to deliver high-performance memory solutions.

You will develop cell and access device technologies, perform silicon experiments, and analyze electrical data to drive reliability and density improvements. Relocation assistance may be available.

Qualifications

• MS or PhD in Electrical Engineering, Materials Science, Applied Physics, or related field.
• Strong understanding of semiconductor device physics including MOSFETs, access devices, and capacitors.
• Experience in electrical measurement, device evaluation, and data interpretation.
• Familiarity with DRAM operation fundamentals, such as activation, sensing, and disturb mechanisms.
• Proficient in scripting and data analysis tools including Python, MATLAB, and JMP.

Responsibilities

• Develop DRAM cell and access device technologies to improve density, retention, and disturb immunity.
• Develop and perform silicon experiments, conducting detailed electrical characterization and data analysis.
• Analyze array-level behaviors and collaborate with circuit teams to optimize operation sequences.
• Integrate with multi-functional teams to ensure the scalability and robustness of developed solutions.
• Contribute to the technology roadmap, benchmarking internal capabilities against industry standards and proposing strategic adjustments.

Skills

Scripting & data analysis

Semiconductor physics knowledge

Education

MS/PhD in EE, Materials Science, Applied Physics

Tools

Python

MATLAB

JMP

Synopsys Sentaurus

Silvaco

Job description

Micron Technology, Inc. in Boise, Idaho seeks a DRAM Device & Cell Technology Engineer to define and optimize next-generation DRAM architectures, working with a cross-functional team to deliver high-performance memory solutions.

You will develop cell and access device technologies, perform silicon experiments, and analyze electrical data to drive reliability and density improvements. Relocation assistance may be available.