HBM Memory Design Engineer — AI-Driven Innovation

Micron Technology, Inc.; Richardson (TX); On-site; USD 120,000 - 180,000; Full time

Benefits offered by this job

Medical/dental/vision plans

Paid time off & holidays

401(k) retirement plan

Job summary

Micron Technology, Inc. in Richardson, TX is seeking a Memory Design Engineer specializing in HBM to design, optimize, and validate memory and mixed-signal circuits.

You will work with design, verification, process, and product engineering teams to ensure robust, manufacturable solutions and drive tape-out readiness. You will apply parasitic modeling and AI-assisted tools to improve accuracy, speed up iterations, and support cross-functional development efforts across memory products.

Qualifications

• Experience with digital, analog, or mixed-signal circuit design.
• Proficiency in parasitic modeling, verification, and simulation.
• Experience with layout processes including floor planning, placement, and routing.

Responsibilities

• Design, layout, and optimize memory, logic, and analog circuits for HBM products.
• Perform parasitic modeling, validation, reticle experiments, and support tape-out revisions.
• Collaborate with cross-functional teams to ensure manufacturability and product success.
• Use AI-supported design and simulation tools to enhance modeling accuracy and accelerate development cycles.

Skills

HBM memory design

Parasitic modeling

Layout and P&R

AI-assisted design tools

Education

Bachelor’s or Master’s degree in Electrical/Computer Engineering

Tools

EDA tools

CAD

Job description

Micron Technology, Inc. in Richardson, TX is seeking a Memory Design Engineer specializing in HBM to design, optimize, and validate memory and mixed-signal circuits.

You will work with design, verification, process, and product engineering teams to ensure robust, manufacturable solutions and drive tape-out readiness. You will apply parasitic modeling and AI-assisted tools to improve accuracy, speed up iterations, and support cross-functional development efforts across memory products.