HBM Memory Design Engineer — Innovate Next-Gen Memory

Micron Memory Malaysia Sdn Bhd; Richardson (TX); On-site; USD 75,000 - 110,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Paid holidays

Job summary

Micron Technology is seeking a New College Grad Memory Design Engineer (HBM) in Richardson, TX. You will design, optimize, and validate memory, logic, and analog circuits for HBM products, collaborating with design, verification, process, and product teams to ensure manufacturability.

You will engage in parasitic modeling, validation, reticle experiments, and tape-out support, using AI-assisted design and industry-standard EDA tools to accelerate development cycles.

Qualifications

• Bachelor’s or Master’s degree in Electrical Engineering, Computer Engineering, or related field.
• Experience using Generative AI for productivity.

Responsibilities

• Design, layout, and optimize memory, logic, and analog circuits for HBM products.
• Perform parasitic modeling, validation, reticle experiments, and support tape-out revisions.
• Complete layout processes including floor planning, placement, and routing.
• Conduct circuit verification using industry-standard modeling and simulation tools.

Skills

Generative AI

Parasitic modeling

Layout/EDA tools

Digital/Analog/Mixed-signal circuits

Education

Bachelor’s/Master’s in Electrical Engineering or Computer Engineering

Tools

EDA tools

Job description

Micron Technology is seeking a New College Grad Memory Design Engineer (HBM) in Richardson, TX. You will design, optimize, and validate memory, logic, and analog circuits for HBM products, collaborating with design, verification, process, and product teams to ensure manufacturability.

You will engage in parasitic modeling, validation, reticle experiments, and tape-out support, using AI-assisted design and industry-standard EDA tools to accelerate development cycles.