Lead GaN Plasma Etch Process Development Engineer

Texas Instruments Incorporated; Sherman (TX); Hybrid; USD 120,000 - 180,000; Full time

Job summary

Texas Instruments Incorporated in Sherman, Texas is seeking an Advanced GaN Process Development Engineer to develop, optimize, and transfer advanced plasma etch processes for next-generation GaN devices.

You will design experiments, analyze data, and collaborate with integration, equipment, metrology, and manufacturing teams to drive process readiness for production and successful technology transfers into high-volume manufacturing.

Responsibilities

• Develop and optimize plasma etch processes for GaN devices.
• Design and execute DOE to improve etch rate, selectivity, and CD control.
• Characterize process performance and establish process windows.
• Collaborate with cross-functional teams to transfer tech to manufacturing.

Job description

Texas Instruments Incorporated in Sherman, Texas is seeking an Advanced GaN Process Development Engineer to develop, optimize, and transfer advanced plasma etch processes for next-generation GaN devices.

You will design experiments, analyze data, and collaborate with integration, equipment, metrology, and manufacturing teams to drive process readiness for production and successful technology transfers into high-volume manufacturing.