Advanced GaN Plasma Etch Process Engineer

Texas Instruments; Sherman (TX); On-site; USD 140,000 - 190,000; Full time

Job summary

Texas Instruments is seeking an Advanced GaN Process Development Engineer to join the Plasma Etch Process Development team. You will develop, optimize, and transfer advanced plasma etch processes for GaN devices, collaborating across integration, equipment, metrology and manufacturing to enable robust product ramp.

The role requires strong plasma etch fundamentals, semiconductor process development, statistical data analysis, and problem solving.

Qualifications

• Minimum 5+ years of semiconductor plasma/dry etch process development experience.
• Bachelor’s degree in engineering, science, or related STEM discipline.
• Strong foundation in statistical process control, engineering change control and process release strategies.
• Experience with DOE methodologies and statistical analysis.
• Familiarity with metrology techniques including SEM, CD-SEM, ellipsometry and defect inspection tools.

Responsibilities

• Develop and optimize plasma etch processes for advanced semiconductor devices.
• Design and execute experiments (DOE) to improve critical process metrics (etch rate, selectivity, CD control, profile control, defectivity, uniformity).
• Characterize process performance and establish process windows for manufacturing robustness.
• Evaluate new process chemistries, hardware configurations, and chamber technologies.
• Support development and qualification of next-generation etch technologies and technology transfers to manufacturing.
• Lead chamber matching, equipment qualification, and process performance improvement activities.

Skills

Statistical process control

DOE methodologies

Metrology techniques

Engineering change control

Statistical analysis

GaN processes

Python

Communication skills

Cross-functional collaboration

Education

Bachelor's degree in engineering/science/STEM

Tools

LAM etch platforms

AMAT

TEL equipment

Job description

Texas Instruments is seeking an Advanced GaN Process Development Engineer to join the Plasma Etch Process Development team. You will develop, optimize, and transfer advanced plasma etch processes for GaN devices, collaborating across integration, equipment, metrology and manufacturing to enable robust product ramp.

The role requires strong plasma etch fundamentals, semiconductor process development, statistical data analysis, and problem solving.