DRAM Process Integration Engineer - Yield and Innovation

1000 Micron Technology, Inc.

Boise (ID)

On-site

USD 120,000 - 180,000

Full time

4 days ago
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Benefits offered by this job

Medical plan
Dental plan
Vision plan
Paid time off
401(k) plan

Job summary

Micron Technology, Inc. is seeking a Process Integration Engineer in Boise, Idaho to advance manufacturability of next‑generation DRAM technologies.

You will collaborate with process development, product engineering, design, yield, mask, and probe teams to tackle yield and performance challenges. The role requires a Master’s degree with 7–10+ years in semiconductor process integration and expertise in device physics.

Qualifications

  • Master's degree in engineering with 7–10+ years of relevant semiconductor experience.
  • Demonstrated expertise in semiconductor device physics and process integration.
  • Knowledge of DRAM or NAND memory technologies.

Responsibilities

  • Lead technology integration activities to enable manufacturability of advanced DRAM technologies.
  • Partner with cross-functional teams to resolve yield, performance, reliability, and margin challenges.
  • Design and implement R&D fab experiments and optimize process flows to meet requirements.
  • Analyze inline, defect, parametric, and probe data to identify root causes and drive improvements.
  • Lead cross-functional problem solving and drive actions to implementation.

Skills

Semiconductor physics
Process integration
Data analysis
DOE design of experiments
Statistical techniques
AI-assisted analytics

Education

Master's degree in engineering
PhD in engineering

Job description

Micron Technology, Inc. is seeking a Process Integration Engineer in Boise, Idaho to advance manufacturability of next‑generation DRAM technologies.

You will collaborate with process development, product engineering, design, yield, mask, and probe teams to tackle yield and performance challenges. The role requires a Master’s degree with 7–10+ years in semiconductor process integration and expertise in device physics.

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